17894097. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chia-Chu Liu of Hsinchu City (TW)

Chia-He Lin of Hsinchu County (TW)

Wen-Yun Wang of Taipei City (TW)

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17894097 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the patent application includes a semiconductor substrate, an isolation feature, gate lines, and a first gate structure.

• The isolation feature is positioned over the semiconductor substrate and surrounds an active region of the substrate.
• Gate lines extend across the active region of the semiconductor substrate.
• The first gate structure is located over the isolation feature and comprises a first gate line, a second gate line, and a first bridge portion.
• The first and second gate lines are substantially parallel with the gate lines, and the first bridge portion connects the first gate line to the second gate line.

• • Potential Applications:**

• Semiconductor manufacturing
• Integrated circuits
• Electronics industry

• • Problems Solved:**

• Improved isolation of active regions in semiconductor devices
• Enhanced gate structure design for better performance

• • Benefits:**

• Increased efficiency in semiconductor devices
• Enhanced functionality of integrated circuits
• Improved overall performance in electronics industry

Original Abstract Submitted

A semiconductor device includes a semiconductor substrate, an isolation feature, gate lines, and a first gate structure. The isolation feature is over the semiconductor substrate and surrounding an active region of the semiconductor substrate. The gate lines extend across the active region of the semiconductor substrate. The first gate structure is over the isolation feature. The first gate structure comprises a first gate line, a second gate line, and a first bridge portion, the first and second gate lines are substantially parallel with the gate lines, and the first bridge portion connects the first gate line to the second gate line.