17846948. MULTILAYER GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

MULTILAYER GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Hong-Chih Chen of Changhua County (TW)

Wei-Chih Kao of Taipei (TW)

Chun-Yi Chang of Hsinchu City (TW)

Yu-San Chien of Hsinchu City (TW)

Hsin-Che Chiang of Taipei City (TW)

Chun-Sheng Liang of Puyan Township (TW)

MULTILAYER GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17846948 titled 'MULTILAYER GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The patent application describes a semiconductor device structure with multiple gate structures and a multilayer gate isolation structure. The multilayer gate isolation structure includes two insulating features, one adjacent to the gate structures and another separating the substrate from the first insulating feature. The second insulating feature has a different material and lower dielectric constant or etch resistance than the first insulating feature.

• The semiconductor device structure includes first and second gate structures formed over a semiconductor substrate.
• A multilayer gate isolation structure separates the first and second gate structures.
• The multilayer gate isolation structure includes a first insulating feature adjacent to the upper portions of the gate structures.
• A second insulating feature separates the semiconductor substrate from the first insulating feature.
• The material of the second insulating feature is different from the first insulating feature.
• The second insulating feature has a lower dielectric constant or lower etch resistance than the first insulating feature.

Potential Applications

• Semiconductor manufacturing industry
• Electronics industry
• Integrated circuit design and fabrication

Problems Solved

• Improved isolation between gate structures
• Enhanced performance and reliability of semiconductor devices
• Reduction in cross-talk and interference between gate structures

Benefits

• Higher efficiency and functionality of semiconductor devices
• Improved signal integrity and performance
• Enhanced manufacturing process and yield

Original Abstract Submitted

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes first and second gate structures formed over a semiconductor substrate and a multilayer gate isolation structure separating the first gate structure from the second gate structure. The multilayer gate isolation structure includes a first insulating feature adjacent to upper portions of the first gate structure and the second gate structure, and a second insulating feature separating the semiconductor substrate from the first insulating feature. The material of the second insulating feature is different than that of the first insulating feature. The second insulating feature has a lower dielectric constant or lower etch resistance than the first insulating feature.