18524646. MEMORY DEVICE simplified abstract (SK hynix Inc.)
Contents
- 1 MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE
Organization Name
Inventor(s)
Dong Sun Sheen of Gyeonggi-do (KR)
Seung Hwan Kim of Gyeonggi-do (KR)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18524646 titled 'MEMORY DEVICE
Simplified Explanation
The memory device described in the abstract is a novel structure that includes an active layer with a channel layer between two sides, and a word line crossing the channel layer in a perpendicular direction.
- The memory device includes a substrate, an active layer, and a word line.
- The active layer is laterally oriented with an opened first side and a closed second side.
- The channel layer is located between the first and second sides of the active layer.
- The word line is laterally oriented in a direction perpendicular to the active layer.
Potential Applications
This technology could be applied in:
- High-speed memory devices
- Data storage systems
- Embedded systems
Problems Solved
This technology addresses issues such as:
- Improving memory device performance
- Enhancing data storage efficiency
- Increasing memory capacity
Benefits
The benefits of this technology include:
- Faster data access speeds
- Higher memory density
- Improved overall system performance
Potential Commercial Applications
Potential commercial applications of this technology could include:
- Consumer electronics
- Automotive systems
- Industrial automation
Possible Prior Art
There is no known prior art related to this specific memory device structure.
Unanswered Questions
How does this memory device compare to existing memory technologies in terms of speed and capacity?
This article does not provide a direct comparison between this memory device and existing technologies.
What are the manufacturing costs associated with implementing this new memory device structure?
The article does not address the potential manufacturing costs of this technology.
Original Abstract Submitted
A memory device includes a substrate, an active layer spaced apart from a surface of the substrate and laterally oriented in a first direction and including an opened first side, a closed second side, and a channel layer between the first side and the second side, and a word line laterally oriented in a second direction crossing the first direction while surrounding the channel layer.
