17849739. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chia-Hao Chang of Hsinchu City (TW)
Jia-Chuan You of Taoyuan City (TW)
Yu-Chun Liu of Taipei City (TW)
Kuo-Cheng Chiang of Hsinchu County (TW)
Chih-Hao Wang of Hsinchu County (TW)
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17849739 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate, stacks of semiconductor nanosheets, a gate structure, strained layers, and a blocking wall. Here are the key points:
- The device has a substrate with two fins separated by an insulating region.
- Semiconductor nanosheets are arranged in two stacks, one on each fin.
- The gate structure wraps around the nanosheet stacks.
- Strained layers are placed on each fin, adjacent to the respective nanosheet stack.
- A blocking wall is positioned on the insulating region, between the strained layers.
- The top surface of the blocking wall is higher than the top surface of the strained layers.
Potential applications of this technology:
- Advanced semiconductor devices for various electronic applications.
- Improved performance and efficiency in electronic devices.
- Enhanced integration of nanosheet technology in semiconductor manufacturing.
Problems solved by this technology:
- Provides a structure that allows for better control and manipulation of semiconductor nanosheets.
- Addresses challenges in integrating nanosheet technology with existing semiconductor processes.
- Offers improved performance and functionality in electronic devices.
Benefits of this technology:
- Enables the development of more advanced and efficient electronic devices.
- Enhances the performance and capabilities of semiconductor nanosheets.
- Provides a solution for integrating nanosheet technology into existing semiconductor manufacturing processes.
Original Abstract Submitted
A semiconductor device includes a substrate, first and second stacks of semiconductor nanosheets, a gate structure, first and second strained layers and a blocking wall. The substrate includes first and second fins separated by an insulating region. The first stack of semiconductor nanosheets is disposed on the first fin. The second stack of semiconductor nanosheets disposed on the second fin. The gate structure wraps the first and second stacks of semiconductor nanosheets. The first strained layer is disposed on the first fin adjacent to the first stack of semiconductor nanosheets. The second strained layer is disposed on the second fin adjacent to the second stack of semiconductor nanosheets. The blocking wall is disposed on the insulating region and located between the first and second strained layers. The top surface of the blocking wall is higher than the top surface of the first strained layer or the second strained layer.
