17886689. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Jung-Chien Cheng of Tainan City (TW)
Kuo-Cheng Chiang of Zhubei City (TW)
Shi-Ning Ju of Hsinchu City (TW)
Guan-Lin Chen of Baoshan Township (TW)
Chih-Hao Wang of Baoshan Township (TW)
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17886689 titled 'STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE
Simplified Explanation
The abstract describes a method for forming a semiconductor device structure, including the formation of fin structures and metal gate stacks wrapped around and extending across the fin structures.
- Formation of first and second fin structures over a substrate
- Formation of first metal gate stack wrapped around and extending across the fin structures
- Formation of second metal gate stack wrapped around and extending across the fin structures
- Formation of protective structure extending into the first gate stack
- Formation of dielectric structure extending into the protective structure and the second metal gate stack
- Portion of protective structure between dielectric structure and metal gate stack
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- Potential Applications
- Advanced semiconductor devices
- High-performance electronic devices
- Integrated circuits
- Problems Solved
- Enhancing performance of semiconductor devices
- Improving efficiency of electronic devices
- Increasing integration density of circuits
- Benefits
- Improved device performance
- Enhanced efficiency
- Higher integration density
- Potential for smaller and more powerful electronic devices
Original Abstract Submitted
A semiconductor device structure and a formation method are provided. The method includes forming a first fin structure and a second fin structure over a substrate. The method also includes forming a first metal gate stack wrapped around and extending across the first fin structure and the second fin structure. The method further includes forming a second metal gate stack wrapped around and extending across the first fin structure and the second fin structure. In addition, the method includes forming a protective structure extending into the first gate stack and forming a dielectric structure extending into the protective structure and the second metal gate stack. A portion of the protective structure is between the dielectric structure and the metal gate stack.
