17886797. SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Cheng-Wei Chang of Taipei (TW)
Shahaji B. More of Hsinchu (TW)
Shuen-Shin Liang of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17886797 titled 'SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF
Simplified Explanation
The semiconductor device structure described in the abstract includes layers with varying dopant concentrations to improve performance and efficiency.
- Source/drain epitaxial feature with three layers: first epitaxial layer, second epitaxial layer with lower dopant concentration, and third epitaxial layer with higher dopant concentration.
- Source/drain cap layer above the epitaxial feature with even higher dopant concentration.
- Silicide layer on top of the source/drain cap layer for further functionality.
---
- Potential Applications
- High-performance semiconductor devices
- Integrated circuits
- Power electronics
- Problems Solved
- Improved performance and efficiency of semiconductor devices
- Enhanced conductivity and functionality
- Better control of dopant concentrations
- Benefits
- Higher performance capabilities
- Increased efficiency
- Enhanced functionality
- Improved control over device characteristics
Original Abstract Submitted
A semiconductor device structure is provided. The semiconductor device structure includes a source/drain epitaxial feature disposed over a substrate, wherein the source/drain epitaxial feature comprises a first epitaxial layer, a second epitaxial layer in contact with the first epitaxial layer, wherein the second epitaxial layer has a first dopant concentration, and a third epitaxial layer having sidewalls enclosed by the second epitaxial layer, wherein the third epitaxial layer has a second dopant concentration higher than the first dopant concentration. The semiconductor device structure also includes a source/drain cap layer disposed above and in contact with the second epitaxial layer and the third epitaxial layer, wherein the source/drain cap layer has a third dopant concentration higher than the second dopant concentration, and a silicide layer disposed above and in contact with the source/drain cap layer.
