17936604. FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL simplified abstract (International Business Machines Corporation)
Contents
- 1 FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL
Organization Name
International Business Machines Corporation
Inventor(s)
Shogo Mochizuki of Mechanicville NY (US)
Andrew M. Greene of Slingerlands NY (US)
Gen Tsutsui of Glenmont NY (US)
FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL - A simplified explanation of the abstract
This abstract first appeared for US patent application 17936604 titled 'FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL
Simplified Explanation
The semiconductor structure disclosed in the patent application aims to improve the switching speed of a first transistor by incorporating a first nanosheet channel with a gate section containing silicon-germanium (SiGe) surrounded by a metal gate, and a junction section comprising silicon surrounded by a spacer.
- The semiconductor structure includes a first source/drain (S/D), a metal gate, a spacer, and a first nanosheet channel.
- The first nanosheet channel consists of a gate section with silicon-germanium (SiGe) surrounded by the metal gate, and a junction section comprising silicon surrounded by the spacer.
Potential Applications
The technology described in the patent application could potentially be applied in:
- High-speed electronic devices
- Advanced computing systems
Problems Solved
The semiconductor structure addresses the following issues:
- Slow switching speed of transistors
- Inefficient performance of electronic devices
Benefits
The benefits of this technology include:
- Improved switching speed of transistors
- Enhanced performance of electronic devices
Potential Commercial Applications
The semiconductor structure could find commercial applications in:
- Semiconductor manufacturing industry
- Electronics and computing sectors
Possible Prior Art
One possible prior art for this technology could be the use of nanosheet channels in semiconductor structures to enhance transistor performance.
Unanswered Questions
How does the incorporation of SiGe in the gate section improve the switching speed of the transistor?
The patent application does not provide detailed information on the specific mechanisms through which SiGe enhances the switching speed of the transistor.
What are the potential challenges or limitations of implementing this semiconductor structure in practical electronic devices?
The patent application does not address any potential obstacles or drawbacks that may arise when implementing this technology in real-world applications.
Original Abstract Submitted
Embodiments herein include semiconductor structures that may include a semiconductor structure for improving the switching speed of a first transistor is disclosed. The first transistor may include a first source/drain (S/D), a metal gate, a spacer between the first S/D and the metal gate, and a first nanosheet channel. The first nanosheet channel may include: a gate section with silicon-germanium (SiGe) surrounded by the metal gate; and a junction section comprising silicon surrounded by the spacer.
