17859242. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Beomjin Park of Hwaseong-si (KR)
Myung Gil Kang of Suwon-si (KR)
Daewon Kim of Hwaseong-si (KR)
Dongwon Kim of Seongnam-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17859242 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The patent application describes a semiconductor device with a substrate divided into two regions, each having an active pattern and a gate electrode. The device also includes cutting patterns that penetrate the gate electrodes.
- The first gate electrode is narrower than the second gate electrode.
- The first cutting pattern has a wider maximum width than the first gate electrode.
- The second cutting pattern has a narrower minimum width than the second gate electrode.
Potential Applications:
- This semiconductor device can be used in various electronic devices such as smartphones, computers, and tablets.
- It can be utilized in the manufacturing of integrated circuits and microprocessors.
Problems Solved:
- The invention addresses the need for precise cutting patterns in semiconductor devices.
- It solves the challenge of controlling the width of gate electrodes in different regions of the device.
Benefits:
- The device allows for more precise cutting patterns, enhancing the overall performance and reliability of the semiconductor device.
- The different widths of gate electrodes provide flexibility in designing and optimizing the device for specific applications.
- The invention enables the production of more efficient and compact electronic devices.
Original Abstract Submitted
A semiconductor device including a substrate that includes first and second regions; a first active pattern on the first region and a second active pattern on the second region; a first gate electrode on the first active pattern and a second gate electrode on the second active pattern; and a first cutting pattern that penetrates the first gate electrode and a second cutting pattern that penetrates the second gate electrode, wherein a width of the first gate electrode as measured in one direction is less than a width of the second gate electrode, a maximum width of the first cutting pattern is greater than the width of the first gate electrode, and a minimum width of the second cutting pattern is less than the width of the second gate electrode.
