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Category:H01L21/762
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Pages in category "H01L21/762"
The following 172 pages are in this category, out of 172 total.
1
- 17384092. Dielectric Fin Structures With Varying Height simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17534629. Reliability Macros for Contact Over Active Gate Layout Designs simplified abstract (International Business Machines Corporation)
- 17668452. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17679465. NANOSHEET TRANSISTOR DEVICES AND RELATED FABRICATION METHODS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17689644. Semiconductor Devices with Uniform Gate Regions simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17691293. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17744061. Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17808186. SEMICONDUCTOR DEVICE WITH POWER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17815915. ISOLATION REGIONS WITHIN A MEMORY DIE simplified abstract (Micron Technology, Inc.)
- 17822173. STACKED FET SUBSTRATE CONTACT simplified abstract (International Business Machines Corporation)
- 17822454. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17823508. EMBEDDED SOI STRUCTURE FOR LOW LEAKAGE MOS CAPACITOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17836463. METHOD FOR FILLING TRENCH IN SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837048. METHOD OF FABRICATING VOID-FREE CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 17838303. FIN FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17859284. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17863317. SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE simplified abstract (Micron Technology, Inc.)
- 17886753. SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17897201. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17900804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17930739. GAA DEVICE WITH THE SUBSTRATE INCLUDING EMBEDDED INSULATING STRUCTURE BETWEEN BSPDN AND CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17933187. SELF-ALIGNED BACKSIDE CONTACT MODULE FOR 3DIC APPLICATION simplified abstract (QUALCOMM Incorporated)
- 17937212. FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL simplified abstract (Intel Corporation)
- 17937431. POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS simplified abstract (International Business Machines Corporation)
- 17940195. BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION simplified abstract (Intel Corporation)
- 17957821. GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract (Intel Corporation)
- 17958040. SINGLE DIE REINFORCED GALVANIC ISOLATION DEVICE simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 17977250. SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS) simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 17986119. Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18067168. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18133977. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18150474. Transistor Gate Structures and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151412. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151792. FILM MODIFICATION FOR GATE CUT PROCESS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152477. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18153335. SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18155912. SEMICONDUCTOR DEVICE INCLUDING INSULATING STRUCTURE SURROUNDING THROUGH VIA AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157395. STRUCTURE OF ISOLATION FEATURE OF SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18162892. SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18166521. INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL FIELD-EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18173948. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18199504. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18303205. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18306716. Isolation Regions For Isolating Transistors and the Methods Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18312811. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18320423. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18395192. TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract (Intel Corporation)
- 18488381. SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18516595. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP simplified abstract (Intel Corporation)
- 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518642. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18520346. REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520872. DEVICE LAYER INTERCONNECTS simplified abstract (Intel Corporation)
- 18520917. SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521584. FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522265. METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526062. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526290. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526317. FinFET Device and Method of Forming Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18532619. Trench FET Device and Method of Manufacturing Trench FET Device simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18543769. REDUCED ESR IN TRENCH CAPACITOR simplified abstract (Texas Instruments Incorporated)
2
- 20240010491. METHOD FOR MANUFACTURING A STRUCTURE COMPRISING A PLURALITY OF MEMBRANES OVERLOOKING CAVITIES simplified abstract (Soitec)
- 20240014101. MICROFLUIDIC CHANNELS SEALED WITH DIRECTIONALLY-GROWN PLUGS simplified abstract (GlobalFoundries U.S. Inc.)
- 20240021601. BCD DEVICE LAYOUT AREA DEFINED BY A DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 20240040778. MEMORY STRUCTURE, SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)
- 20240047579. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
B
- Blockchain patent applications on April 25th, 2024
- Blockchain patent applications on February 1st, 2024
- Blockchain patent applications on February 8th, 2024
- Blockchain patent applications on January 11th, 2024
- Blockchain patent applications on January 18th, 2024
- Blockchain patent applications on March 14th, 2024
- Blockchain patent applications on March 28th, 2024
H
I
- Intel corporation (20240105520). TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240113105). FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL simplified abstract
- Intel corporation (20240113107). GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract
- Intel corporation (20240136277). TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract
- Intel Corporation patent applications on April 25th, 2024
- Intel Corporation patent applications on April 4th, 2024
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on March 14th, 2024
- Intel Corporation patent applications on March 28th, 2024
- International business machines corporation (20240113125). POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS simplified abstract
- International business machines corporation (20240128333). DIRECT BACKSIDE SELF-ALIGNED CONTACT simplified abstract
- International Business Machines Corporation patent applications on April 18th, 2024
- International Business Machines Corporation patent applications on April 4th, 2024
- International Business Machines Corporation patent applications on February 29th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
M
Q
S
- Samsung electronics co., ltd. (20240113160). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240136254). INTEGRATED CIRCUIT DEVICE simplified abstract
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 4th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240096753). SEMICONDUCTOR DEVICE INCLUDING INSULATING STRUCTURE SURROUNDING THROUGH VIA AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096883). METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096943). REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096958). SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097033). FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097036). FinFET Device and Method of Forming Same simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128120). PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128126). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128178). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan Semiconductor manufacturing Co., Ltd. patent applications on April 18th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240102959). INTEGRATED CIRCUIT WITH BIOFETS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105500). METHODS FOR SEAM REPAIR AND SEMICONDUCTOR STRUCTURE MANUFACTURED THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105707). Semiconductor Structures And Methods Of Forming The Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113112). Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113113). Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113164). FILM MODIFICATION FOR GATE CUT PROCESS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136220). Shallow Trench Isolation Forming Method and Structures Resulting Therefrom simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136222). Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136418). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 11th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
- Texas instruments incorporated (20240112947). SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS) simplified abstract
- Texas instruments incorporated (20240113042). SINGLE DIE REINFORCED GALVANIC ISOLATION DEVICE simplified abstract
- TEXAS INSTRUMENTS INCORPORATED patent applications on April 4th, 2024
- Texas Instruments Incorporated patent applications on February 1st, 2024
U
- US Patent Application 17748632. Isolation Structure And A Self-Aligned Capping Layer Formed Thereon simplified abstract
- US Patent Application 17752211. SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF simplified abstract
- US Patent Application 17828802. METHOD OF PREPARING ACTIVE AREAS simplified abstract
- US Patent Application 18153686. Trench Isolation Connectors for Stacked Structures simplified abstract
- US Patent Application 18167024. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE simplified abstract
- US Patent Application 18181293. REDISTRIBUTION LAYER METALLIC STRUCTURE AND METHOD simplified abstract
- US Patent Application 18231912. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR PREPARING THE SAME simplified abstract
- US Patent Application 18232171. Semiconductor Device With Isolation Structures simplified abstract
- US Patent Application 18232510. VTFET WITH BURIED POWER RAILS simplified abstract
- US Patent Application 18232545. NOVEL SOI DEVICE STRUCTURE FOR ROBUST ISOLATION simplified abstract
- US Patent Application 18338759. Fin Field Effect Transistor (FinFET) Device and Method for Forming the Same simplified abstract
- US Patent Application 18346589. Structure and Method for Enhancing Robustness of ESD Device simplified abstract
- US Patent Application 18352133. Hybrid Channel Semiconductor Device and Method simplified abstract
- US Patent Application 18358464. DECOUPLING FINFET CAPACITORS simplified abstract
- US Patent Application 18358508. Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment simplified abstract
- US Patent Application 18360332. METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18360546. METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18360814. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A DUMMY SECTION simplified abstract
- US Patent Application 18361540. Controlling Fin-Thinning Through Feedback simplified abstract
- US Patent Application 18362302. Dielectric Gap Fill simplified abstract
- US Patent Application 18362707. TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME simplified abstract
- US Patent Application 18362868. INTEGRATED CIRCUIT WITH ACTIVE REGION JOGS simplified abstract
- US Patent Application 18363439. MULTI-LAYERED INSULATING FILM STACK simplified abstract
- US Patent Application 18363725. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18364614. METHODS FOR REDUCING SCRATCH DEFECTS IN CHEMICAL MECHANICAL PLANARIZATION simplified abstract
- US Patent Application 18364646. PROFILE OF DEEP TRENCH ISOLATION STRUCTURE FOR ISOLATION OF HIGH-VOLTAGE DEVICES simplified abstract
- US Patent Application 18365402. METHOD FOR FORMING A SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE simplified abstract
- US Patent Application 18365517. DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL simplified abstract
- US Patent Application 18366274. SEMICONDUCTOR FEATURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- US Patent Application 18366831. LOW-COST SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURE simplified abstract
- US Patent Application 18446549. SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF simplified abstract
- US Patent Application 18446652. NITRIDE-CONTAINING STI LINER FOR SIGE CHANNEL simplified abstract
- US Patent Application 18446664. ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract
- US Patent Application 18446960. DEVICES WITH STRAINED ISOLATION FEATURES simplified abstract
- US Patent Application 18447618. Method of Gap Filling for Semiconductor Device simplified abstract
- US Patent Application 18447881. INTEGRATED CIRCUIT WITH BACKSIDE TRENCH FOR METAL GATE DEFINITION simplified abstract