17863317. SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE simplified abstract (Micron Technology, Inc.)
Contents
SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE
Organization Name
Inventor(s)
Yoshiaki Fukuzumi of Yokohama (JP)
David H. Wells of Boise ID (US)
Byeung Chul Kim of Boise ID (US)
Richard H. Hill of Boise ID (US)
Paolo Tessariol of Arcore (MB) (IT)
SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17863317 titled 'SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE
Simplified Explanation
The patent application describes methods, systems, and devices for selectively merging cavities in isolation regions of a memory die. Here is a simplified explanation of the abstract:
- The formation of material structures in a memory die involves depositing alternating layers of two different materials over a substrate.
- Cavities are then formed through the stack of alternating material layers.
- Portions of the second material are removed to create voids between layers of the first material.
- To create an electrical isolation region, a dielectric material is deposited in some of the cavities and in a portion of the voids between the layers of the first material.
Potential Applications:
- Memory devices: This technology can be applied to improve the isolation regions in memory dies, leading to enhanced performance and reliability of memory devices.
Problems Solved:
- Improved isolation: The selective cavity merging technique helps in creating effective electrical isolation regions in memory dies, reducing the risk of interference and improving overall device performance.
Benefits:
- Enhanced performance: The improved isolation regions result in better signal integrity and reduced noise, leading to enhanced performance of memory devices.
- Increased reliability: The selective cavity merging technique helps in minimizing cross-talk and interference, improving the reliability and stability of memory devices.
Original Abstract Submitted
Methods, systems, and devices for selective cavity merging for isolation regions in a memory die are described. For example, formation of material structures of a memory die may include depositing a stack of alternating layers of a first material and a second material over a substrate of the memory die, forming a pattern of cavities through the stack of alternating material layers, and forming voids between layers of the first material based on removing portions of the second material. An electrical isolation region may be formed between portions of the memory die based on depositing a dielectric material in at least some of the cavities and in at least a portion of the voids between the layers of the first material.
