20240021601. BCD DEVICE LAYOUT AREA DEFINED BY A DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)

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BCD DEVICE LAYOUT AREA DEFINED BY A DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company Limited

Inventor(s)

Tsung-Yu Yang of Tainan City (TW)

Po-Wei Liu of Tainan City (TW)

BCD DEVICE LAYOUT AREA DEFINED BY A DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240021601 titled 'BCD DEVICE LAYOUT AREA DEFINED BY A DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FORMING THE SAME

Simplified Explanation

The abstract describes a semiconductor structure for use with bipolar-cmos-dmos (BCD) devices, specifically focusing on a deep trench layout area-saving structure. The structure includes a deep trench isolation structure that defines the layout area of the BCD device, with rounded corners and specific intersections.

  • The semiconductor device includes a first BCD device formed within a first perimeter of a BCD layout area.
  • The deep trench isolation structure surrounds the first BCD device and defines the first perimeter of the layout area.
  • The deep trench isolation structure has a first rounded corner that defines a first corner of the layout area.
  • The deep trench isolation structure consists of vertical and horizontal portions, as well as a "T"-shaped intersection and a cross-shaped intersection.

Potential applications of this technology:

  • This semiconductor structure can be used in the manufacturing of BCD devices, which are commonly used in power management applications.
  • It can be utilized in the production of integrated circuits for automotive electronics, consumer electronics, and industrial applications.
  • The deep trench isolation structure helps improve the performance and reliability of BCD devices by reducing parasitic capacitance and improving isolation between components.

Problems solved by this technology:

  • The deep trench isolation structure solves the problem of limited layout area in BCD devices by providing an area-saving design.
  • It addresses the challenge of reducing parasitic capacitance and improving isolation between components, which can affect the performance and reliability of BCD devices.

Benefits of this technology:

  • The deep trench isolation structure allows for more efficient use of layout area, enabling the integration of more components in a smaller space.
  • It helps improve the performance and reliability of BCD devices by reducing parasitic capacitance and improving isolation between components.
  • The structure provides a cost-effective solution for manufacturing BCD devices with enhanced functionality and performance.


Original Abstract Submitted

devices and methods of manufacture for a deep trench layout area-saving semiconductor structure for use with bipolar-cmos-dmos (bcd) devices. a semiconductor device may comprise a first bcd device formed within a first perimeter of a first bcd layout area, and a deep trench isolation structure defining the first perimeter of the first bcd layout area, in which the deep trench isolation structure may comprise a first rounded corner that may define a first corner of the first bcd layout area. a semiconductor device may comprise, a substrate, bcd device formed on the substrate, and a deep trench isolation structure laterally surrounding the bcd device. the deep trench isolation structure, with respect to a top-down view, may comprise vertical portions, horizontal portions, a “t”-shaped intersection connecting at least one vertical portion and at least one horizontal portion, and a cross-shaped intersection connecting two vertical portions and two horizontal portions.

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