18520917. SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Question 1:
- 1.11 Answer:
- 1.12 Question 2:
- 1.13 Answer:
- 1.14 Original Abstract Submitted
SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Yan-Ting Lin of Baoshan Township (TW)
Chih-Yun Chin of Taichung (TW)
SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18520917 titled 'SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
Simplified Explanation
The semiconductor structure described in the patent application includes a unique source/drain configuration with different layers having distinct properties, such as material composition, lattice constant, dopant concentration, or alloy content.
- The semiconductor structure comprises a fin on a substrate, a gate structure over the fin, and a source/drain in the fin near the gate structure.
- The source/drain consists of a bottom layer, a supportive layer above the bottom layer, and a top layer on top of the supportive layer.
- The supportive layer has different properties compared to the bottom and top layers, such as different material composition, lattice constant, dopant concentration, or alloy content.
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Integrated circuit design
- Nanotechnology research
Problems Solved
This innovation addresses issues related to:
- Enhancing semiconductor device performance
- Improving transistor efficiency
- Optimizing source/drain structures
Benefits
The benefits of this technology include:
- Increased device reliability
- Enhanced electrical characteristics
- Improved overall semiconductor performance
Potential Commercial Applications
A potential commercial application for this technology could be:
- Advanced semiconductor devices for consumer electronics
Possible Prior Art
One possible prior art related to this technology is:
- Previous patents on source/drain structures in semiconductor devices
Unanswered Questions
Question 1:
What specific materials are used in the different layers of the source/drain structure?
Answer:
The abstract does not provide specific details on the materials used in the different layers of the source/drain structure.
Question 2:
How does the different property of the supportive layer contribute to the overall performance of the semiconductor structure?
Answer:
The abstract does not elaborate on how the different property of the supportive layer impacts the performance of the semiconductor structure.
Original Abstract Submitted
An embodiment is a semiconductor structure. The semiconductor structure includes a fin on a substrate. A gate structure is over the fin. A source/drain is in the fin proximate the gate structure. The source/drain includes a bottom layer, a supportive layer over the bottom layer, and a top layer over the supportive layer. The supportive layer has a different property than the bottom layer and the top layer, such as a different material, a different natural lattice constant, a different dopant concentration, and/or a different alloy percent content.
