US Patent Application 18363725. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract
Contents
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chi-Ming Chen of Hsinchu County (TW)
Kuei-Ming Chen of New Taipei City (TW)
Po-Chun Liu of Hsinchu City (TW)
Chia-Shiung Tsai of Hsin-Chu (TW)
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18363725 titled 'MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a manufacturing method for a semiconductor device. Here are the key points:
- The method involves several steps in the manufacturing process.
- A sacrificial substrate is provided as a base.
- An epitaxial layer is formed on top of the sacrificial substrate.
- An etch stop layer is then formed on the epitaxial layer.
- Carbon atoms are implanted into the etch stop layer.
- A capping layer and a device layer are subsequently formed on the etch stop layer.
- A handle substrate is bonded to the device layer.
- Finally, the sacrificial substrate, epitaxial layer, and etch stop layer with carbon atoms are removed from the handle substrate.
Overall, this method allows for the creation of a semiconductor device by layering various materials and then removing unnecessary layers to leave the desired device structure.
Original Abstract Submitted
A manufacturing method of a semiconductor device includes at least the following steps. A sacrificial substrate is provided. An epitaxial layer is formed on the sacrificial substrate. An etch stop layer is formed on the epitaxial layer. Carbon atoms are implanted into the etch stop layer. A capping layer and a device layer are formed on the etch stop layer. A handle substrate is bonded to the device layer. The sacrificial substrate, the epitaxial layer, and the etch stop layer having the carbon atoms are removed from the handle substrate.
