Taiwan semiconductor manufacturing company, ltd. (20240136418). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shih-Cheng Chen of New Taipei City (TW)
Chun-Hsiung Lin of Hsinchu County (TW)
Chih-Hao Wang of Hsinchu County (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136418 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a device with various layers and structures, including an active region, gate structure, source/drain epitaxial structure, epitaxial layer, metal alloy layer, contact, and contact etch stop layer.
- The device includes an active region where the main operations take place.
- A gate structure is positioned across the active region to control the flow of current.
- The source/drain epitaxial structure is located over the active region and next to the gate structure.
- An epitaxial layer is placed over the source/drain epitaxial structure.
- A metal alloy layer covers the epitaxial layer.
- A contact is on top of the metal alloy layer.
- The contact etch stop layer lines the sidewalls of the source/drain epitaxial structure.
- The metal alloy layer is separated from the contact etch stop layer.
Potential Applications
This technology could be applied in the semiconductor industry for the development of advanced electronic devices.
Problems Solved
This innovation helps in improving the performance and efficiency of electronic devices by optimizing the layers and structures within the device.
Benefits
The device offers enhanced functionality, increased reliability, and improved overall performance compared to existing technologies.
Potential Commercial Applications
The technology could be utilized in the production of high-performance integrated circuits for various electronic applications.
Possible Prior Art
Prior art related to similar semiconductor device structures and layer configurations may exist, but specific examples are not provided in the patent application.
Unanswered Questions
How does this device compare to traditional semiconductor devices in terms of performance and efficiency?
The article does not provide a direct comparison between this device and traditional semiconductor devices in terms of performance and efficiency.
What specific electronic applications could benefit the most from this technology?
The article does not specify the specific electronic applications that could benefit the most from the technology described in the patent application.
Original Abstract Submitted
a device includes an active region, a gate structure, a source/drain epitaxial structure, an epitaxial layer, a metal alloy layer, a contact, and a contact etch stop layer. the gate structure is across the active region. the source/drain epitaxial structure is over the active region and adjacent the gate structure. the epitaxial layer is over the source/drain epitaxial structure. the metal alloy layer is over the epitaxial layer. the contact is over the metal alloy layer. the contact etch stop layer lines sidewalls of the source/drain epitaxial structure. the metal alloy layer is spaced apart from the contact etch stop layer.
