Taiwan semiconductor manufacturing company, ltd. (20240113112). Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract

Semiconductor Structure Cutting Process and Structures Formed Thereby

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Ryan Chia-Jen Chen of Hsinchu (TW)

Cheng-Chung Chang of Kaohsiung City (TW)

Shao-Hua Hsu of Taitung City (TW)

Yu-Hsien Lin of Kaohsiung City (TW)

Ming-Ching Chang of Hsinchu (TW)

Li-Wei Yin of Hsinchu (TW)

Tzu-Wen Pan of Hsinchu (TW)

Yi-Chun Chen of Hsinchu (TW)

Semiconductor Structure Cutting Process and Structures Formed Thereby - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113112 titled 'Semiconductor Structure Cutting Process and Structures Formed Thereby

Simplified Explanation

The patent application describes methods of cutting gate structures and fins on a substrate to form specific structures. Here is a simplified explanation of the patent:

• The substrate includes first and second fins with an isolation region in between.
• A gate structure is formed with a conformal gate dielectric over the first fin and a gate electrode on top.
• A first insulating fill structure extends vertically from the gate structure to the isolation region.
• A second insulating fill structure abuts the first insulating fill structure and the end sidewall of the second fin.

Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication

Problems Solved: - Improved gate structure formation - Enhanced isolation between fins

Benefits: - Higher performance in electronic devices - Increased efficiency in manufacturing processes

Potential Commercial Applications: - Semiconductor industry advancements - Technology for electronic device manufacturers

Possible Prior Art: - Previous methods of gate structure formation in semiconductor devices

Unanswered Questions: 1. How does this method compare to traditional gate structure cutting techniques? 2. What specific electronic devices could benefit the most from this technology?

Original Abstract Submitted

methods of cutting gate structures and fins, and structures formed thereby, are described. in an embodiment, a substrate includes first and second fins and an isolation region. the first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. a gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. a first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. no portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. a second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. the first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.