17859284. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jihoon Chang of Yongin-si (KR)
Sooho Shin of Hwaseong-si (KR)
Dongwan Kim of Hwaseong-si (KR)
Chansic Yoon of Anyang-si (KR)
Hyeonwoo Jang of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17859284 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that includes a substrate with a trench, an isolation structure within the trench, and a gate structure on the substrate and the isolation structure. The inner wall oxide layer pattern and the liner pattern are formed on the surface of the trench, with the inner wall oxide layer pattern being lower than the substrate's surface. There is no step difference between the upper surface of the inner wall oxide layer pattern and the upper surface of the liner pattern.
- The semiconductor device includes a substrate with a trench.
- An isolation structure is formed within the trench.
- A gate structure is present on the substrate and the isolation structure.
- The inner wall oxide layer pattern and the liner pattern are conformally formed on the trench's surface.
- The top surface of the inner wall oxide layer pattern is lower than the substrate's upper surface.
- There is no step difference between the upper surface of the inner wall oxide layer pattern and the upper surface of the liner pattern.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit production
Problems solved by this technology:
- Provides improved isolation structure within a semiconductor device
- Ensures uniformity and smoothness of the inner wall oxide layer pattern and the liner pattern
- Reduces step differences, which can affect device performance
Benefits of this technology:
- Enhanced performance and reliability of semiconductor devices
- Improved manufacturing efficiency and yield
- Enables the production of smaller and more advanced integrated circuits.
Original Abstract Submitted
A semiconductor device including a substrate including a trench; an isolation structure including an inner wall oxide layer pattern, a liner pattern, and a filling insulation pattern stacked in the trench; and a gate structure on the substrate and the isolation structure, wherein the inner wall oxide layer pattern and the liner pattern are conformally formed on a surface of the trench, a top surface of the inner wall oxide layer pattern is lower than an upper surface of the substrate, and a boundary between an upper surface of the inner wall oxide layer pattern and an upper surface of the liner pattern has no step difference.
