Texas instruments incorporated (20240112947). SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS) simplified abstract
Contents
- 1 SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS)
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS) - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this technology compare to other isolation techniques in terms of performance and cost-effectiveness?
- 1.9.3 What are the specific design considerations that need to be taken into account when implementing this technology in different types of integrated circuits?
- 1.10 Original Abstract Submitted
SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS)
Organization Name
texas instruments incorporated
Inventor(s)
Scott Kelly Montgomery of Rowlett TX (US)
Jeffery Nilles of Los Altos CA (US)
SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS) - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240112947 titled 'SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS)
Simplified Explanation
The present disclosure pertains to shallow trench isolation (STI) processing with local oxidation of silicon (LOCOS) and an integrated circuit formed thereby. In an example, an integrated circuit includes a semiconductor layer, a LOCOS layer, an STI structure, and a passive circuit component. The semiconductor layer is over a substrate. The LOCOS layer is over the semiconductor layer. The STI structure extends into the semiconductor layer. The passive circuit component is over and touches the LOCOS layer.
- Semiconductor layer over substrate
- LOCOS layer over semiconductor layer
- STI structure extending into semiconductor layer
- Passive circuit component over and touching LOCOS layer
Potential Applications
This technology could be applied in the manufacturing of integrated circuits, particularly in the development of advanced semiconductor devices.
Problems Solved
This technology helps in improving the isolation between components in an integrated circuit, reducing interference and enhancing overall performance.
Benefits
The use of LOCOS processing with STI structures can lead to better integration and functionality of passive circuit components, ultimately improving the efficiency of the integrated circuit.
Potential Commercial Applications
"Enhancing Integrated Circuits with LOCOS and STI Processing: Improving Performance and Efficiency"
Possible Prior Art
Prior art may include patents or publications related to semiconductor processing techniques involving LOCOS and STI structures.
Unanswered Questions
How does this technology compare to other isolation techniques in terms of performance and cost-effectiveness?
This article does not provide a direct comparison with other isolation techniques, leaving a gap in understanding the competitive advantages of this approach.
What are the specific design considerations that need to be taken into account when implementing this technology in different types of integrated circuits?
The article does not delve into the specific design considerations for various types of integrated circuits, leaving room for further exploration in this area.
Original Abstract Submitted
the present disclosure generally relates to shallow trench isolation (sti) processing with local oxidation of silicon (locos), and an integrated circuit formed thereby. in an example, an integrated circuit includes a semiconductor layer, a locos layer, an sti structure, and a passive circuit component. the semiconductor layer is over a substrate. the locos layer is over the semiconductor layer. the sti structure extends into the semiconductor layer. the passive circuit component is over and touches the locos layer.
