Taiwan semiconductor manufacturing company, ltd. (20240136222). Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract
Contents
- 1 Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Tzung-Yi Tsai of Taoyuan City (TW)
Tsung-Lin Lee of Hsinchu County (TW)
Yen-Ming Chen of Hsin-Chu County (TW)
Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136222 titled 'Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication
Simplified Explanation
The patent application discloses different isolation liners for different types of FinFETs and associated isolation feature fabrication. The method involves forming oxide and nitride liners over fins in different regions, then filling trenches with isolation material and recessing to form isolation features.
- Different isolation liners for different types of FinFETs
- Formation of oxide and nitride liners over fins in different regions
- Filling trenches with isolation material and recessing to form isolation features
Potential Applications
This technology can be applied in the semiconductor industry for the fabrication of advanced FinFET devices with improved isolation features.
Problems Solved
This technology solves the problem of providing effective isolation for different types of FinFETs, enhancing the performance and reliability of the devices.
Benefits
The benefits of this technology include improved isolation efficiency, better device performance, and increased reliability of FinFET devices.
Potential Commercial Applications
The potential commercial applications of this technology include the production of high-performance FinFET devices for various electronic applications.
Possible Prior Art
One possible prior art in this field could be the use of different isolation liners for FinFET devices, but the specific combination of oxide and nitride liners as described in this patent application may be novel.
Unanswered Questions
How does this technology compare to existing methods for isolation in FinFET devices?
This technology offers a unique approach to isolation in FinFET devices by using different liners for different regions, potentially improving performance and reliability.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing?
One potential challenge could be the scalability of the fabrication process and the compatibility of the materials used with existing manufacturing equipment.
Original Abstract Submitted
different isolation liners for different type finfets and associated isolation feature fabrication are disclosed herein. an exemplary method includes performing a fin etching process on a substrate to form first trenches defining first fins in a first region and second trenches defining second fins in a second region. an oxide liner is formed over the first fins in the first region and the second fins in the second region. a nitride liner is formed over the oxide liner in the first region and the second region. after removing the nitride liner from the first region, an isolation material is formed over the oxide liner and the nitride liner to fill the first trenches and the second trenches. the isolation material, the oxide liner, and the nitride liner are recessed to form first isolation features (isolation material and oxide liner) and second isolation features (isolation material, nitride liner, and oxide liner).
