17940195. BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION simplified abstract (Intel Corporation)
Contents
- 1 BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Unanswered Questions
- 1.10 Original Abstract Submitted
BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION
Organization Name
Inventor(s)
Minwoo Jang of Portland OR (US)
Chia-Ching Lin of Portland OR (US)
Yanbin Luo of Portland OR (US)
Ting-Hsiang Hung of Beaverton OR (US)
Feng Zhang of Hillsboro OR (US)
BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17940195 titled 'BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION
Simplified Explanation
The abstract describes techniques for forming semiconductor devices with a barrier layer to prevent recessing of the dielectric fill. The layer includes oxygen and a metal, such as aluminum.
- The barrier layer is formed over the dielectric fill to prevent or reduce recessing during subsequent processing.
- The semiconductor regions extend above a subfin region separated by a dielectric fill acting as STI structure.
- The barrier layer may include oxygen and a metal, such as aluminum.
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
The technology addresses the issue of recessing of the dielectric fill during processing, which can lead to device failure or performance degradation.
Benefits
The barrier layer helps maintain the integrity of the dielectric fill, ensuring proper functioning of the semiconductor devices. The technology enables the fabrication of high-performance and reliable semiconductor devices.
Potential Commercial Applications
Optimizing Semiconductor Device Manufacturing Process with Barrier Layer Technology
Unanswered Questions
How does the barrier layer impact the overall performance of the semiconductor devices?
The article does not delve into the specific performance enhancements or limitations that may result from the implementation of the barrier layer technology.
Are there any potential drawbacks or challenges associated with the use of the barrier layer in semiconductor device fabrication?
The article does not discuss any potential drawbacks or challenges that may arise from incorporating the barrier layer into the manufacturing process.
Original Abstract Submitted
Techniques are provided herein to form semiconductor devices that include a layer across an upper surface of a dielectric fill between devices and configured to prevent or otherwise reduce recessing of the dielectric fill. In this manner, the layer may be referred to as a barrier layer or recess-inhibiting layer. The semiconductor regions of the devices extend above a subfin region that may be native to the substrate. These subfin regions are separated from one another using a dielectric fill that acts as a shallow trench isolation (STI) structure to electrically isolate devices from one another. A barrier layer is formed over the dielectric fill early in the fabrication process to prevent or otherwise reduce the dielectric fill from recessing during subsequent processing. The layer may include oxygen and a metal, such as aluminum.
