Taiwan semiconductor manufacturing company, ltd. (20240102959). INTEGRATED CIRCUIT WITH BIOFETS simplified abstract

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INTEGRATED CIRCUIT WITH BIOFETS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Tung-Tsun Chen of Hsinchu City (TW)

Yi-Hsing Hsiao of Hsinchu City (TW)

Jui-Cheng Huang of Hsinchu City (TW)

Yu-Jie Huang of Kaohsiung City (TW)

INTEGRATED CIRCUIT WITH BIOFETS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240102959 titled 'INTEGRATED CIRCUIT WITH BIOFETS

Simplified Explanation

The patent application describes an IC structure with a biologically sensitive field-effect transistor (BioFET) in a semiconductor substrate, a dielectric layer with a sensing well, a biosensing film, fluid channel walls, and a heater.

  • The IC structure includes a BioFET in a semiconductor substrate.
  • A dielectric layer with a sensing well extends to the channel region of the BioFET.
  • A biosensing film lines the sensing well, with fluid channel walls defining a containment region over it.
  • A heater in the semiconductor substrate overlaps with the fluid containment region.

Potential Applications

The technology could be used in medical devices for detecting biological markers, environmental sensors for monitoring contaminants, and in biotechnology research for analyzing biological samples.

Problems Solved

This technology allows for sensitive and accurate detection of biological substances, enabling faster and more efficient analysis compared to traditional methods.

Benefits

The IC structure offers high sensitivity, precision, and reliability in detecting biological molecules, making it valuable for various applications in healthcare, environmental monitoring, and research.

Potential Commercial Applications

  • Healthcare diagnostics
  • Environmental monitoring systems
  • Biotechnology research tools

Possible Prior Art

One possible prior art could be the use of field-effect transistors for biosensing applications, but the specific combination of components and features described in this patent application may be novel.

Unanswered Questions

How does the biosensing film interact with the biological substances being detected?

The interaction between the biosensing film and the biological substances is not detailed in the abstract. Further information on the mechanism of detection would be beneficial for understanding the technology.

What is the specific role of the fluid channel walls in the IC structure?

While the abstract mentions the fluid channel walls defining a containment region, the exact function or purpose of these walls in relation to the biosensing process is not elaborated. More details on their role would provide a clearer picture of the technology.


Original Abstract Submitted

an ic structure includes a biologically sensitive field-effect transistor (biobet) in a semiconductor substrate, and a dielectric layer over a backside surface of the semiconductor substrate. the dielectric layer has a sensing well extending through the dielectric layer to a channel region of the biofet. the ic structure further includes a biosensing film, a plurality of fluid channel walls, and a first heater. the biosensing film lines the sensing well in the dielectric layer. the fluid channel walls are over the biosensing film and define a fluid containment region over the sensing well of the dielectric layer. the first heater is in the semiconductor substrate. the first heater has at least a portion overlapping with the fluid containment region.