18526317. FinFET Device and Method of Forming Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 FinFET Device and Method of Forming Same
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FinFET Device and Method of Forming Same - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
FinFET Device and Method of Forming Same
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
FinFET Device and Method of Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18526317 titled 'FinFET Device and Method of Forming Same
Simplified Explanation
The method described in the abstract involves forming a stressor material in a recess adjacent to a dummy gate structure on a fin over a substrate, followed by epitaxially growing a source/drain region in the recess after removing a portion of the stressor material.
- Form a fin over a substrate
- Create a dummy gate structure over the fin
- Remove a portion of the fin next to the dummy gate to create a recess
- Deposit stressor material into the recess
- Remove some of the stressor material from the recess
- Epitaxially grow a source/drain region in the recess
Potential Applications
This technology could be applied in the semiconductor industry for the fabrication of advanced transistors with improved performance characteristics.
Problems Solved
This technology helps in enhancing the performance of transistors by introducing stressor materials in the source/drain regions, which can improve carrier mobility and overall device efficiency.
Benefits
- Improved transistor performance - Enhanced carrier mobility - Increased device efficiency
Potential Commercial Applications
The technology could be utilized in the production of high-performance integrated circuits for various electronic devices, such as smartphones, computers, and other consumer electronics.
Possible Prior Art
One possible prior art could be the use of stressor materials in semiconductor devices to improve carrier mobility and device performance.
Unanswered Questions
How does this technology compare to existing methods for enhancing transistor performance?
This article does not provide a direct comparison to existing methods for improving transistor performance. It would be beneficial to understand the specific advantages and limitations of this approach compared to other techniques.
What are the specific materials used for the stressor material in this method?
The abstract does not mention the specific type of stressor material used in the process. Knowing the exact materials could provide insights into the effectiveness and compatibility of this technology with different semiconductor materials.
Original Abstract Submitted
A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, removing a portion of the fin adjacent the dummy gate structure to form a first recess, depositing a stressor material in the first recess, removing at least a portion of the stressor material from the first recess, and after removing the at least a portion of the stressor material, epitaxially growing a source/drain region in the first recess.
