Taiwan semiconductor manufacturing co., ltd. (20240096958). SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract
Contents
- 1 SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Yan-Ting Lin of Baoshan Township (TW)
Chih-Yun Chin of Taichung (TW)
SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096958 titled 'SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
Simplified Explanation
The semiconductor structure described in the abstract includes a fin on a substrate, a gate structure over the fin, and a source/drain in the fin proximate the gate structure. The source/drain consists of a bottom layer, a supportive layer over the bottom layer, and a top layer over the supportive layer, with the supportive layer having different properties than the bottom layer and the top layer.
- The semiconductor structure comprises a fin on a substrate.
- A gate structure is positioned over the fin.
- The source/drain is located in the fin near the gate structure.
- The source/drain is composed of a bottom layer, a supportive layer, and a top layer.
- The supportive layer has distinct properties from the bottom and top layers, such as different material composition or dopant concentration.
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Integrated circuits
- Nanotechnology research
Problems Solved
This innovation addresses issues related to:
- Enhancing semiconductor device performance
- Improving transistor efficiency
- Reducing power consumption in electronic devices
Benefits
The benefits of this technology include:
- Increased speed and efficiency of electronic devices
- Enhanced functionality of semiconductor structures
- Potential for smaller and more powerful devices
Potential Commercial Applications
Optimizing semiconductor structures for:
- Mobile devices
- Computer processors
- IoT devices
Possible Prior Art
Prior art may include:
- Semiconductor fabrication techniques
- Transistor design principles
- Materials science research in semiconductor technology
Unanswered Questions
How does the supportive layer impact the overall performance of the semiconductor structure?
The specific role and influence of the supportive layer on the functionality of the semiconductor structure remain unclear.
What are the potential challenges in scaling this technology for mass production?
The scalability and manufacturing feasibility of implementing this semiconductor structure on a large scale are important considerations that need further exploration.
Original Abstract Submitted
an embodiment is a semiconductor structure. the semiconductor structure includes a fin on a substrate. a gate structure is over the fin. a source/drain is in the fin proximate the gate structure. the source/drain includes a bottom layer, a supportive layer over the bottom layer, and a top layer over the supportive layer. the supportive layer has a different property than the bottom layer and the top layer, such as a different material, a different natural lattice constant, a different dopant concentration, and/or a different alloy percent content.
