Samsung electronics co., ltd. (20240136254). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136254 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The integrated circuit (IC) device described in the patent application includes a substrate with fin-type active regions protruding from it to define a trench region. The device also features source/drain regions, a device isolation film, an etch stop structure, a via power rail, and a backside power rail.
- Fin-type active regions protrude from the substrate in a first lateral direction.
- Source/drain regions are located on the fin-type active regions.
- A device isolation film is present in the trench region, separated from the substrate vertically.
- An etch stop structure fills at least a portion of the trench region between the substrate and the device isolation film.
- A via power rail connects the pair of fin-type active regions and source/drain regions, passing through the etch stop structure.
- A backside power rail passes through the substrate and is in contact with one end of the via power rail.
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Integrated circuit design
- Power management systems
Problems Solved
This technology helps address:
- Improved power distribution
- Enhanced device isolation
- Efficient signal routing
Benefits
The benefits of this technology include:
- Higher performance in integrated circuits
- Better power efficiency
- Enhanced reliability and durability
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Mobile devices
- Computer systems
- Automotive electronics
Possible Prior Art
One possible prior art for this technology could be the use of similar power rail structures in other integrated circuit designs.
Unanswered Questions
How does this technology impact overall power consumption in electronic devices?
This article does not delve into the specific power consumption benefits of the described technology. Further research or testing may be needed to determine the exact impact on power usage.
What are the potential cost implications of implementing this technology in mass production?
The article does not discuss the cost implications of mass-producing devices with this technology. It would be essential to analyze the manufacturing process and materials to understand the cost-effectiveness of widespread adoption.
Original Abstract Submitted
an integrated circuit (ic) device includes a substrate, a pair of fin-type active regions protruding from the substrate to define a trench region on the substrate, the fin-type active regions extending in a first lateral direction, a pair of source/drain regions on the fin-type active regions, respectively, a device isolation film in the trench region, the device isolation film apart from the substrate in a vertical direction, an etch stop structure filling at least a portion of the trench region between the substrate and the device isolation film, a via power rail between the pair of fin-type active regions and between the pair of source/drain regions, the via power rail passing through at least a portion of the etch stop structure, and a backside power rail passing through the substrate, the backside power rail in contact with one end of the via power rail.
