US Patent Application 18167024. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE simplified abstract

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

Organization Name

CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor(s)

Peimeng Wang of Hefei City (CN)

Ning Xi of Hefei City (CN)

SHIJIE Bai of Hefei City (CN)

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18167024 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

Simplified Explanation

The patent application describes a method for forming a semiconductor structure using various layers on a substrate.

• The layers include an insulation layer, initial metal conductive layer, initial sacrifice layer, and a mask layer.
• A metal conductive layer and sacrifice layer are formed by etching the initial layers based on a patterned mask layer.
• The patterned mask layer is removed using an ashing process.
• The sacrifice layer and by-products are removed, exposing the metal conductive layer, through a corrosion process using an alkaline corrosion solution.
• An isolation structure is formed between adjacent metal conductive layers.

Original Abstract Submitted

A semiconductor structure is formed by: providing a substrate, wherein an insulation layer, an initial metal conductive layer, an initial sacrifice layer, and a mask layer stacking in sequence are formed on the substrate, wherein the initial sacrifice layer includes a metal oxide layer; forming a metal conductive layer and a sacrifice layer atop the metal conductive layer by etching the initial sacrifice layer and the initial metal conductive layer using an oxygen source gas as an etching gas based on a patterned mask layer; removing the patterned mask layer by performing an ashing process using the oxygen source gas as the etching gas; removing the sacrifice layer as well as a by-product formed during the etching and the ashing process and exposing the metal conductive layer by performing a corrosion process using an alkaline corrosion solution; and forming an isolation structure between adjacent metal conductive layers.