US Patent Application 18361540. Controlling Fin-Thinning Through Feedback simplified abstract
Contents
Controlling Fin-Thinning Through Feedback
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tsu-Hui Su of Taipei City (TW)
Chun-Hsiang Fan of Hsinchu (TW)
Yu-Wen Wang of New Taipei City (TW)
Kuo-Bin Huang of Jhubei City (TW)
Controlling Fin-Thinning Through Feedback - A simplified explanation of the abstract
This abstract first appeared for US patent application 18361540 titled 'Controlling Fin-Thinning Through Feedback
Simplified Explanation
The patent application describes a method for forming isolation regions in a semiconductor substrate and creating a semiconductor fin.
- Isolation regions are formed in the semiconductor substrate.
- A semiconductor strip is placed between the isolation regions.
- The isolation regions are recessed, allowing the semiconductor strip to protrude higher and form a semiconductor fin.
- The fin width of the semiconductor fin is measured.
- An etch recipe is generated based on the measured fin width.
- A thinning process is performed on the semiconductor fin using the etching recipe.
Original Abstract Submitted
A method includes forming isolation regions extending into a semiconductor substrate. A semiconductor strip is between the isolation regions. The method further includes recessing the isolation regions so that a top portion of the semiconductor strip protrudes higher than top surfaces of the isolation regions to form a semiconductor fin, measuring a fin width of the semiconductor fin, generating an etch recipe based on the fin width, and performing a thinning process on the semiconductor fin using the etching recipe.
