US Patent Application 18366831. LOW-COST SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURE simplified abstract
Contents
LOW-COST SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Harry-Hak-Lay Chuang of Zhubei City (TW)]]
[[Category:Hsin Fu Lin of Hsinchu (TW)]]
[[Category:Chien Hung Liu of Hsinchu County (TW)]]
LOW-COST SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18366831 titled 'LOW-COST SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURE
Simplified Explanation
- The patent application is about an integrated chip (IC) design. - The IC includes a substrate, which is a base layer for the chip. - The substrate has a metal layer, a device layer, and an insulating layer. - A semiconductor device is placed on the device layer. - An interlayer dielectric (ILD) layer is added on top of the semiconductor device and the substrate. - The purpose of the IC design is not explicitly mentioned in the abstract.
Original Abstract Submitted
Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC includes a substrate. The substrate includes a metal layer, a device layer disposed over the metal layer, and an insulating layer disposed vertically between the metal layer and the device layer. A semiconductor device is disposed on the device layer. An interlayer dielectric (ILD) layer is disposed over the semiconductor device and the substrate.
