Taiwan semiconductor manufacturing co., ltd. (20240097036). FinFET Device and Method of Forming Same simplified abstract
Contents
- 1 FinFET Device and Method of Forming Same
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FinFET Device and Method of Forming Same - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
FinFET Device and Method of Forming Same
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
FinFET Device and Method of Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097036 titled 'FinFET Device and Method of Forming Same
Simplified Explanation
The method described in the abstract involves forming a fin over a substrate, depositing a stressor material in a recess, and epitaxially growing a source/drain region in the recess.
- Forming a fin over a substrate
- Forming a dummy gate structure over the fin
- Removing a portion of the fin adjacent to the dummy gate structure to create a recess
- Depositing a stressor material in the recess
- Removing at least a portion of the stressor material from the recess
- Epitaxially growing a source/drain region in the recess
Potential Applications
This technology could be applied in the semiconductor industry for the fabrication of advanced transistors with improved performance and efficiency.
Problems Solved
This technology helps in enhancing the performance of transistors by introducing stressor materials to induce strain in the channel region, thereby improving carrier mobility and overall device performance.
Benefits
- Improved transistor performance - Enhanced carrier mobility - Increased efficiency of semiconductor devices
Potential Commercial Applications
"Enhancing Transistor Performance with Stressor Materials: Applications in Semiconductor Industry"
Possible Prior Art
One possible prior art could be the use of stressor materials in semiconductor devices to improve carrier mobility and device performance.
Unanswered Questions
How does this technology compare to existing methods of enhancing transistor performance?
This article does not provide a direct comparison with existing methods of enhancing transistor performance. Further research or analysis would be needed to determine the specific advantages of this technology over other approaches.
What are the specific materials used for the stressor material in this method?
The abstract does not specify the exact materials used for the stressor material. Additional information or details would be required to understand the composition and properties of the stressor material employed in this process.
Original Abstract Submitted
a method includes forming a fin over a substrate, forming a dummy gate structure over the fin, removing a portion of the fin adjacent the dummy gate structure to form a first recess, depositing a stressor material in the first recess, removing at least a portion of the stressor material from the first recess, and after removing the at least a portion of the stressor material, epitaxially growing a source/drain region in the first recess.
