18173948. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)

From WikiPatents
Jump to navigation Jump to search

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

Organization Name

Kioxia Corporation

Inventor(s)

Tomoya Oori of Kuwana Mie (JP)

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18173948 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a method for manufacturing a semiconductor device. Here is a simplified explanation of the abstract:

  • The method starts by forming a mask film that covers part of a first trench in the semiconductor device.
  • This mask film divides the first trench into one or more second trenches in the longitudinal direction.
  • Next, a first insulating film is filled into the second trenches.
  • The mask film is then removed.
  • Finally, a second insulating film is formed to cover the entire first trench.

Potential applications of this technology:

  • Manufacturing of semiconductor devices such as integrated circuits, transistors, or memory chips.
  • This method can be used in various industries that utilize semiconductor devices, including electronics, telecommunications, and computing.

Problems solved by this technology:

  • The method provides a way to divide a trench in a semiconductor device using a mask film, allowing for more precise control and customization of the device's structure.
  • It enables the formation of insulating films in specific areas of the device, which can improve its performance and functionality.

Benefits of this technology:

  • The method allows for the creation of complex trench structures in semiconductor devices, enhancing their capabilities.
  • It offers a more efficient and controlled manufacturing process, leading to higher quality and reliability of the devices.
  • The use of insulating films can help reduce power consumption and improve insulation properties in the semiconductor device.


Original Abstract Submitted

A method for manufacturing a semiconductor device includes: forming a mask film such that it covers part of a first trench, thereby dividing the first trench in the longitudinal direction to form one or more second trenches; filling a first insulating film into the second trenches; removing the mask film; and forming a second insulating film such that it covers the entire first trench.

Retrieved from "http://wikipatents.org/index.php?title=18173948._METHOD_FOR_MANUFACTURING_SEMICONDUCTOR_DEVICE,_AND_SEMICONDUCTOR_DEVICE_simplified_abstract_(Kioxia_Corporation)&oldid=18834"