US Patent Application 18153686. Trench Isolation Connectors for Stacked Structures simplified abstract

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Trench Isolation Connectors for Stacked Structures

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Wan-Jyun Syue of Hsinchu County (TW)

Hsueh-Liang Chou of Hsinchu County (TW)

Trench Isolation Connectors for Stacked Structures - A simplified explanation of the abstract

This abstract first appeared for US patent application 18153686 titled 'Trench Isolation Connectors for Stacked Structures

Simplified Explanation

The patent application describes trench isolation connectors for stacked semiconductor structures, specifically for those with high voltage devices.

  • The patent application focuses on a stacked device arrangement that includes two device substrates, each with a different device.
  • An isolation structure is present in the second device substrate, surrounding the second device.
  • The isolation structure extends through the second device substrate from one surface to the other.
  • A conductive connector is placed within the isolation structure, connecting the first and second devices.
  • The conductive connector extends from one surface of the second device substrate to the other.
  • The first and second devices mentioned in the patent application are high voltage devices.


Original Abstract Submitted

Trench isolation connectors are disclosed herein for stacked semiconductor structures, and particularly, for stacked semiconductor structures having high voltage devices. An exemplary stacked device arrangement includes a first device substrate having a first device and a second device substrate having a second device. An isolation structure disposed in the second device substrate surrounds the second device. The isolation structure extends through the second device substrate from a first surface of the second device substrate to a second surface of the second device substrate. A conductive connector is disposed in the isolation structure. The conductive connector is connected to the second device and the first device. The conductive connector extends from the first surface of the second device substrate to the second surface of the second device substrate. The first device and the second device may be a first high voltage device and a second high voltage device, respectively.

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