17900804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Oreste Madia of Bruxelles (BE)

Gerben Doornbos of Kessel-Lo (BE)

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17900804 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The semiconductor structure described in the patent application includes a substrate, a device, a conductor, a backside interconnect, and a thermoelectric generator.

  • The substrate has a front surface and a rear surface, with the device placed on the front surface.
  • The conductor is located at or near the front surface of the substrate and is electrically connected to the device.
  • The backside interconnect is positioned on the rear surface of the substrate and is electrically connected to the device.
  • The thermoelectric generator is embedded in the substrate and is electrically connected to the device through a first-type through via and a second-type through via.
  • The first-type through via connects a first conductive feature of the backside interconnect to the conductor, while the second-type through via connects a second conductive feature of the backside interconnect to the conductor.

Potential applications of this technology:

  • Power generation in semiconductor devices
  • Energy harvesting in electronic systems
  • Thermal management in integrated circuits

Problems solved by this technology:

  • Efficient utilization of waste heat for power generation
  • Improved thermal performance in semiconductor devices
  • Enhanced energy efficiency in electronic systems

Benefits of this technology:

  • Increased energy efficiency
  • Enhanced power generation capabilities
  • Improved thermal management in semiconductor devices


Original Abstract Submitted

A semiconductor structure includes a substrate, a device, a conductor, a backside interconnect, and a thermoelectric generator. The substrate has a front surface and a rear surface opposite to the front surface. The device is disposed on the front surface of the substrate. The conductor is disposed at or near the front surface of the substrate and electrically coupled to the device. The backside interconnect is disposed on the rear surface of the substrate and electrically coupled to the device. The thermoelectric generator is disposed in the substrate and electrically coupled to the device, and includes a first-type through via and a second-type through via. The first-type through via penetrates from the rear surface of the substrate to the conductor, and is connected to a first conductive feature of the backside interconnect and the conductor. The second-type through via penetrates from the rear surface of the substrate to the conductor, and is connected to a second conductive feature of the backside interconnect and the conductor. The second-type through via is different from the first-type through via.

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