Taiwan semiconductor manufacturing company, ltd. (20240113164). FILM MODIFICATION FOR GATE CUT PROCESS simplified abstract
Contents
- 1 FILM MODIFICATION FOR GATE CUT PROCESS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FILM MODIFICATION FOR GATE CUT PROCESS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FILM MODIFICATION FOR GATE CUT PROCESS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
FILM MODIFICATION FOR GATE CUT PROCESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113164 titled 'FILM MODIFICATION FOR GATE CUT PROCESS
Simplified Explanation
The patent application describes a process for converting a portion of a dielectric fill material into a hard mask using a nitrogen treatment or nitrogen plasma. This hard mask is used to form an edge area of a device die through an etching process, with another dielectric fill material provided in the edge area after forming the edge area. The completed device may have a gate cut area with a gradient of nitrogen concentration at an upper portion of the gate cut dielectric.
- Nitrogen treatment or nitrogen plasma is used to convert dielectric fill material into a hard mask.
- The hard mask is utilized to form an edge area of a device die through an etching process.
- Another dielectric fill material is added to the edge area after forming it.
- A gradient of nitrogen concentration is present at the upper portion of the gate cut dielectric in the completed device.
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for the fabrication of advanced electronic devices.
Problems Solved
This technology solves the problem of creating precise edge areas in device dies by converting dielectric fill material into a hard mask using a nitrogen treatment.
Benefits
The benefits of this technology include improved precision in forming edge areas, enhanced device performance, and increased efficiency in the manufacturing process.
Potential Commercial Applications
The technology could be commercially applied in the production of integrated circuits, microprocessors, and other electronic components.
Possible Prior Art
Prior art may include similar processes for converting dielectric materials into hard masks using different treatments or plasmas in semiconductor manufacturing.
Unanswered Questions
How does the nitrogen treatment specifically convert the dielectric fill material into a hard mask?
The patent application mentions a nitrogen treatment or nitrogen plasma, but it does not provide detailed information on the specific chemical reactions or mechanisms involved in this conversion process.
What are the specific characteristics of the nitrogen-like layer that make it suitable for serving as a hard mask?
While the patent application mentions the formation of a nitrogen-like layer for the hard mask, it does not elaborate on the specific properties or qualities of this layer that make it effective for its intended purpose.
Original Abstract Submitted
a process for converting a portion of a dielectric fill material into a hard mask includes a nitrogen treatment or nitrogen plasma to convert a portion of the dielectric fill material into a nitrogen-like layer for serving as a hard mask to form an edge area of a device die by an etching process. after forming the edge area, another dielectric fill material is provided in the edge area. in the completed device, a gate cut area can have a gradient of nitrogen concentration at an upper portion of the gate cut dielectric of the gate cut area.
