Samsung electronics co., ltd. (20240113160). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Kyeonghoon Park of Suwon-si (KR)
Donghyuck Jang of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113160 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with protrusions arranged in two directions, trenches between the protrusions, device isolation layers filling the trenches, gate patterns on the protrusions, and a second device isolation layer between the gate patterns and the second trench.
- Protrusions arranged in a two-dimensional pattern on the substrate
- Trenches provided between the protrusions in two directions
- Device isolation layers filling the trenches
- Gate patterns on the protrusions in one direction
- Second device isolation layer filling the space between the gate patterns and the second trench
- Gate patterns with sidewalls aligned with the inner wall of the second trench
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by providing better isolation between components and reducing interference.
Benefits
The benefits of this technology include increased device reliability, higher processing speeds, and enhanced overall performance of semiconductor devices.
Potential Commercial Applications
The technology could find commercial applications in the electronics industry for the production of high-performance computing devices, mobile devices, and other advanced electronic products.
Possible Prior Art
One possible prior art for this technology could be the use of similar device isolation techniques in semiconductor manufacturing processes.
Unanswered Questions
How does this technology compare to existing methods of device isolation in semiconductor devices?
The article does not provide a direct comparison with existing methods of device isolation in semiconductor devices.
What are the specific performance improvements achieved by this technology compared to traditional semiconductor manufacturing processes?
The article does not detail the specific performance improvements achieved by this technology compared to traditional semiconductor manufacturing processes.
Original Abstract Submitted
a semiconductor device include a substrate including a plurality of protrusions protruding from an upper surface thereof and arranged two-dimensionally in a first direction and a second direction intersecting each other, a first trench provided between the protrusions in the first direction, and a second trench provided between the protrusions in the second direction, a first device isolation layer filling the first trench, gate patterns disposed on the protrusions in the second direction, upper surfaces of the protrusions exposed at both sides of the gate patterns, respectively, and a second device isolation layer filling a space between the gate patterns in the second direction and the second trench, and each of the gate patterns has a first sidewall adjacent to the second trench and aligned with an inner wall of the second trench.
