Taiwan semiconductor manufacturing co., ltd. (20240097033). FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract
Contents
- 1 FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Wei-Jen Lai of Keelung City (TW)
Yen-Ming Chen of Hsin-Chu County (TW)
Tsung-Lin Lee of Hsinchu City (TW)
FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097033 titled 'FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING
Simplified Explanation
The present disclosure provides a method for making a semiconductor structure by forming a composite stress layer on a semiconductor substrate and patterning the substrate to form fin active regions using the composite stress layer as an etch mask.
- Explanation of the patent/innovation:
* Forming a composite stress layer on a semiconductor substrate * Composite stress layer includes a first stress layer with a first compressive stress and a second stress layer with a greater compressive stress * Patterning the semiconductor substrate to form fin active regions using the composite stress layer as an etch mask
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by controlling stress levels in the structure.
Benefits
- Enhanced performance of semiconductor devices
- Improved reliability and stability
- Better control over stress levels in the structure
Potential Commercial Applications
- Semiconductor industry: for manufacturing advanced transistors and integrated circuits
Possible Prior Art
There may be prior art related to methods for controlling stress in semiconductor structures, but specific examples are not provided in this context.
Unanswered Questions
How does this technology compare to existing methods for stress control in semiconductor structures?
This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the advantages and limitations of this new approach.
What are the specific performance improvements achieved by using this composite stress layer in semiconductor structures?
The article does not delve into the specific performance enhancements resulting from the use of the composite stress layer, leaving a gap in understanding the full potential of this technology.
Original Abstract Submitted
the present disclosure provides one embodiment of a method making semiconductor structure. the method includes forming a composite stress layer on a semiconductor substrate, wherein the forming of the composite stress layer includes forming a first stress layer of a dielectric material with a first compressive stress and forming a second stress layer of the dielectric material with a second compressive stress on the first stress layer, the second compressive stress being greater than the first compressive stress; and patterning the semiconductor substrate to form fin active regions using the composite stress layer as an etch mask.
