US Patent Application 18360332. METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE simplified abstract

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chun-Yuan Chen of Hsinchu (TW)

Li-Zhen Yu of Hsinchu (TW)

Huan-Chieh Su of Hsinchu (TW)

Lo-Heng Chang of Hsinchu (TW)

Cheng-Chi Chuang of Hsinchu (TW)

Chih-Hao Wang of Hsinchu (TW)

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18360332 titled 'METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a patent application related to the manufacturing process of a semiconductor device. Here is a simplified explanation of the abstract:

• The patent application focuses on a specific step in the manufacturing process of a semiconductor device.
• During the front side process of the wafer, a hard mask layer is formed under a metal portion of the semiconductor device.
• Additionally, an epitaxial layer is deposited to form epitaxial portions of the semiconductor device.
• In the back side process of the wafer, the epitaxial layer needs to be cut, but the metal portion must be protected from damages during this etching process.
• The hard mask layer serves as a protective cover for the metal portion, ensuring it remains undamaged during the etching of the epitaxial layer.
• This innovation helps to prevent any potential harm to the metal portion of the semiconductor device during the manufacturing process.

Original Abstract Submitted

During a front side process of a wafer, a hard mask layer is formed under a metal portion of a semiconductor device, and an epitaxial layer is deposited to form epitaxial portions of the semiconductor device. In a back side process of the wafer to cut the epitaxial layer, the metal portion is covered and protected by the hard mask layer from damages during etching of the epitaxial layer.