Taiwan semiconductor manufacturing co., ltd. (20240096943). REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES simplified abstract

REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chia-Ta Yu of New Taipei City (TW)

Hsiao-Chiu Hsu of Hsinchu City (TW)

Feng-Cheng Yang of Hsinchu County (TW)

REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096943 titled 'REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES

Simplified Explanation

The semiconductor structure described in the patent application includes semiconductor layers, a metal gate stack, source/drain features, and an isolation structure protruding from the substrate. Here is a simplified explanation of the patent application:

• The semiconductor layers are oriented lengthwise in a first direction on top of a substrate.
• The metal gate stack is oriented lengthwise in a second direction perpendicular to the first direction and includes a top portion and a bottom portion interleaved with the semiconductor layers.
• Source/drain features are located in the semiconductor layers next to the metal gate stack.
• An isolation structure protrudes from the substrate, oriented lengthwise along the second direction, and spaced from the metal gate stack along the first direction. The isolation structure consists of a dielectric layer and an air gap.

1. 1. 1. Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors.

1. 1. 1. Problems Solved

This innovation helps in improving the performance and efficiency of semiconductor devices by providing better isolation and control over the flow of electrical current.

1. 1. 1. Benefits

- Enhanced performance of semiconductor devices. - Improved control over the flow of electrical current. - Increased efficiency in semiconductor manufacturing processes.

1. 1. 1. Potential Commercial Applications

"Advanced Semiconductor Technology for Improved Device Performance"

1. 1. 1. Possible Prior Art

There may be prior art related to semiconductor structures with metal gate stacks and isolation structures, but specific examples are not provided in the patent application.

1. 1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing semiconductor structures in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor structures, leaving a gap in understanding the competitive advantages of this innovation.

1. 1. 1. 1. What specific materials are used in the fabrication of the isolation structure, and how do they contribute to the overall performance of the semiconductor device?

The patent application does not delve into the specific materials used in the isolation structure or their impact on the device's performance, leaving room for further exploration and analysis.

Original Abstract Submitted

a semiconductor structure includes semiconductor layers disposed over a substrate and oriented lengthwise in a first direction, a metal gate stack disposed over the semiconductor layers and oriented lengthwise in a second direction perpendicular to the first direction, where the metal gate stack includes a top portion and a bottom portion that is interleaved with the semiconductor layers, source/drain features disposed in the semiconductor layers and adjacent to the metal gate stack, and an isolation structure protruding from the substrate, where the isolation structure is oriented lengthwise along the second direction and spaced from the metal gate stack along the first direction, and where the isolation structure includes a dielectric layer and an air gap.