US Patent Application 18365402. METHOD FOR FORMING A SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE simplified abstract

METHOD FOR FORMING A SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Cheng-Ta Wu of Shueishang Township (TW)

Chia-Shiung Tsai of Hsin-Chu (TW)

Jiech-Fun Lu of Madou Township (TW)

Kuan-Liang Liu of Pingtung City (TW)

Shih-Pei Chou of Tainan City (TW)

Yu-Hung Cheng of Tainan City (TW)

Yeur-Luen Tu of Taichung (TW)

METHOD FOR FORMING A SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18365402 titled 'METHOD FOR FORMING A SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE

Simplified Explanation

- The patent application describes a method for creating a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. - The method involves forming an insulator layer on a handle substrate and growing a device layer on a sacrificial substrate using epitaxy. - The sacrificial substrate is then bonded to the handle substrate, with the device layer and insulator layer in between. - The sacrificial substrate is removed through etching until the device layer is reached. - The use of epitaxy allows for the formation of a thick device layer, while the thickness of the insulator layer is not affected by the epitaxy process. - This method enables the creation of SOI substrates with both a thick device layer and a thick insulator layer.

Original Abstract Submitted

Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.