US Patent Application 18446652. NITRIDE-CONTAINING STI LINER FOR SIGE CHANNEL simplified abstract

NITRIDE-CONTAINING STI LINER FOR SIGE CHANNEL

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Ya-Wen Chiu of Tainan City (TW)]]

[[Category:Szu-Ying Chen of Hsinchu (TW)]]

[[Category:Lun-Kuang Tan of Hsinchu City (TW)]]

NITRIDE-CONTAINING STI LINER FOR SIGE CHANNEL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446652 titled 'NITRIDE-CONTAINING STI LINER FOR SIGE CHANNEL

Simplified Explanation

The patent application describes a semiconductor device with a fin structure made of silicon germanium (SiGe) that protrudes vertically from a substrate.

• The fin structure is coated with an epi-silicon layer containing nitrogen.
• One or more dielectric liner layers are placed on the epi-silicon layer.
• A dielectric isolation structure is then added on top of the dielectric liner layers.

Original Abstract Submitted

A semiconductor device includes a fin structure that protrudes vertically out of a substrate, wherein the fin structure contains silicon germanium (SiGe). An epi-silicon layer is disposed on a sidewall of the fin structure. The epi-silicon layer contains nitrogen. One or more dielectric liner layers are disposed on the epi-silicon layer. A dielectric isolation structure is disposed over the one or more dielectric liner layers.