US Patent Application 18446549. SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Soon-Kang Huang of Hsin Chu (TW)]]

[[Category:Hsing-Chi Chen of Taichung City (TW)]]

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446549 titled 'SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

Simplified Explanation

The patent application describes a semiconductor structure and a method for forming the structure.

  • The method involves receiving a semiconductor substrate with two regions.
  • A dielectric layer is formed over the substrate.
  • Portions of the dielectric layer are removed to create a dielectric structure in the first region.
  • The dielectric structure consists of a base structure and multiple first isolation structures.
  • A semiconductor layer is then formed, covering both the first and second regions.
  • A portion of the semiconductor layer is removed to expose the top surface of the first isolation structures.
  • Finally, a plurality of second isolation structures are formed in the second region.


Original Abstract Submitted

A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes receiving a semiconductor substrate having a first region and a second region; forming a dielectric layer over the semiconductor substrate; removing portions of the dielectric layer to form a dielectric structure in the first region, wherein the dielectric structure includes a base structure and a plurality of first isolation structures over the base structure; forming a semiconductor layer covering the first region and the second region; removing a portion of the semiconductor layer to expose a top surface of the plurality of first isolation structures; and forming a plurality of second isolation structures in the second region.

Retrieved from "http://wikipatents.org/index.php?title=US_Patent_Application_18446549._SEMICONDUCTOR_STRUCTURE_AND_FORMING_METHOD_THEREOF_simplified_abstract&oldid=8926"