US Patent Application 18447618. Method of Gap Filling for Semiconductor Device simplified abstract
Contents
Method of Gap Filling for Semiconductor Device
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Method of Gap Filling for Semiconductor Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447618 titled 'Method of Gap Filling for Semiconductor Device
Simplified Explanation
The patent application describes a method of manufacturing a semiconductor device.
- The method involves forming a dielectric layer over a plurality of fins on a substrate.
- A first high-k layer is then formed over the dielectric layer.
- A flowable oxide is formed, filling trenches adjacent to the fins.
- The flowable oxide is recessed to create trenches between the fins.
- A second high-k layer is formed over the first high-k layer and the flowable oxide.
- Planarization is performed to expose the top surfaces of the fins.
- The dielectric layer is recessed to create dummy fins, which include remaining portions of the high-k layers and the flowable oxide.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes forming a dielectric layer conformally over a plurality of fins on a substrate, forming a first high-k layer conformally over the dielectric layer, and forming a flowable oxide over the first high-k layer. Forming the flowable oxide includes filling first trenches adjacent fins of the plurality of fins. The method further includes recessing the flowable oxide to form second trenches between adjacent fins of the plurality of fins, forming a second high-k layer over the first high-k layer and the flowable oxide, performing a planarization that exposes top surfaces of the plurality of fins, and recessing the dielectric layer to form a plurality of dummy fins that include remaining portions of the first and second high-k layers and the flowable oxide.
