17838303. FIN FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

FIN FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Ya-Yi Tsai of Hsinchu City (TW)

Sheng-Yi Hsiao of Hsinchu (TW)

Chao-Hsuan Chen of Hsin-Chu (TW)

Yun-Ting Chiang of Hsinchu Country (TW)

Shu-Yuan Ku of Hsinchu Country (TW)

FIN FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17838303 titled 'FIN FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The abstract describes a FinFET, which is a type of transistor used in semiconductor devices. The FinFET includes a semiconductor substrate, a semiconductor fin, a gate structure, and an isolation structure.

• The semiconductor fin protrudes from the semiconductor substrate.
• The gate structure is placed across a portion of the semiconductor fin.
• The isolation structure interrupts the continuity of another portion of the semiconductor fin.
• The isolation structure consists of two stacked portions, with inclined sidewalls in the first portion and straight sidewalls in the second portion.
• The top surface of the first portion is at the same level as the top surface of the gate structure.

Potential applications of this technology:

• Semiconductor devices such as microprocessors, memory chips, and integrated circuits.
• High-performance computing systems.
• Mobile devices and smartphones.
• Internet of Things (IoT) devices.

Problems solved by this technology:

• Improved control over the flow of current in the transistor.
• Reduction of leakage current, leading to lower power consumption.
• Enhanced performance and speed of semiconductor devices.
• Better integration of transistors in complex circuit designs.

Benefits of this technology:

• Higher performance and efficiency in semiconductor devices.
• Lower power consumption, leading to longer battery life in portable devices.
• Improved functionality and capabilities of electronic devices.
• Enables the development of smaller and more compact devices.

Original Abstract Submitted

A FinFET includes a semiconductor substrate, a semiconductor fin, a gate structure, and an isolation structure. The semiconductor fin protrudes from the semiconductor substrate. The gate structure is disposed across a first segment of the semiconductor fin. The isolation structure interrupts a continuity of a second segment of the semiconductor fin. The isolation structure has a first portion and a second portion stacked on the first portion. Sidewalls of the first portion are inclined and sidewalls of the second portion are straight. A top surface of the first portion is coplanar with a top surface of the gate structure.