Taiwan semiconductor manufacturing company, ltd. (20240113113). Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract

Semiconductor Structure Cutting Process and Structures Formed Thereby

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chih-Chang Hung of Hsinchu (TW)

Chia-Jen Chen of Hsinchu (TW)

Ming-Ching Chang of Hsinchu (TW)

Shu-Yuan Ku of Zhubei City (TW)

Yi-Hsuan Hsiao of Taipei City (TW)

I-Wei Yang of Yilan County (TW)

Semiconductor Structure Cutting Process and Structures Formed Thereby - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113113 titled 'Semiconductor Structure Cutting Process and Structures Formed Thereby

Simplified Explanation

The patent application describes methods of cutting gate structures and structures formed, including a gate cut-fill structure with first and second primary portions and an intermediate portion. The first and second gate structures extend parallel over an active area, with a source/drain region between them. The first and second primary portions of the gate cut-fill structure abut the gate structures, while the intermediate portion extends laterally between them.

• Gate structures are cut using a gate cut-fill structure with primary portions and an intermediate portion.
• The gate cut-fill structure is designed to fit between the first and second gate structures over an active area.
• The first and second primary portions of the gate cut-fill structure abut the gate structures, while the intermediate portion extends laterally between them.

Potential Applications

The technology described in the patent application could be applied in the semiconductor industry for the fabrication of advanced integrated circuits.

Problems Solved

This technology solves the problem of efficiently cutting gate structures in semiconductor devices without damaging the surrounding active area.

Benefits

The benefits of this technology include improved precision in cutting gate structures, leading to higher quality semiconductor devices with enhanced performance.

Potential Commercial Applications

The technology could be commercially applied by semiconductor manufacturers looking to improve their fabrication processes for advanced integrated circuits.

Possible Prior Art

One possible prior art in this field is the use of laser cutting techniques for gate structures in semiconductor devices.

How does this technology compare to existing methods of cutting gate structures in terms of efficiency and precision?

The article does not provide a direct comparison between this technology and existing methods in terms of efficiency and precision.

What are the potential limitations or challenges in implementing this technology on a large scale in semiconductor manufacturing?

The article does not address the potential limitations or challenges in implementing this technology on a large scale in semiconductor manufacturing.

Original Abstract Submitted

methods of cutting gate structures, and structures formed, are described. in an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. the first and second gate structures extend parallel. the active area includes a source/drain region disposed laterally between the first and second gate structures. the gate cut-fill structure has first and second primary portions and an intermediate portion. the first and second primary portions abut the first and second gate structures, respectively. the intermediate portion extends laterally between the first and second primary portions. first and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.