US Patent Application 18346589. Structure and Method for Enhancing Robustness of ESD Device simplified abstract
Contents
Structure and Method for Enhancing Robustness of ESD Device
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Alexander Kalnitsky of San Francisco CA (US)
Jen-Chou Tseng of Jhudong Township (TW)
Chia-Wei Hsu of New Taipei City (TW)
Structure and Method for Enhancing Robustness of ESD Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 18346589 titled 'Structure and Method for Enhancing Robustness of ESD Device
Simplified Explanation
- The patent application is about methods and devices for improving the robustness of a bipolar electrostatic discharge (ESD) device. - The robustness of the device is enhanced by adding an emitter region and a collector region next to the emitter region. - An isolation structure is placed between the emitter and collector regions to prevent unwanted electrical interactions. - The ballasting characteristic of the isolation structure is modified by inserting at least one partition structure. - Each partition structure extends alongside either the emitter or collector region. - The purpose of these modifications is to improve the performance and reliability of the bipolar ESD device.
Original Abstract Submitted
Methods and devices are provided herein for enhancing robustness of a bipolar electrostatic discharge (ESD) device. The robustness of a bipolar ESD device includes providing an emitter region and a collector region adjacent to the emitter region. An isolation structure is provided between the emitter region and the collector region. A ballasting characteristic at the isolation structure is modified by inserting at least one partition structure therein. Each partition structure extends substantially abreast at least one of the emitter and the collector regions.
