18155912. SEMICONDUCTOR DEVICE INCLUDING INSULATING STRUCTURE SURROUNDING THROUGH VIA AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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SEMICONDUCTOR DEVICE INCLUDING INSULATING STRUCTURE SURROUNDING THROUGH VIA AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Harry-Haklay Chuang of Zhubei City (TW)

Shiang-Hung Huang of New Taipei City (TW)

Hsin Fu Lin of Hsinchu County (TW)

SEMICONDUCTOR DEVICE INCLUDING INSULATING STRUCTURE SURROUNDING THROUGH VIA AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18155912 titled 'SEMICONDUCTOR DEVICE INCLUDING INSULATING STRUCTURE SURROUNDING THROUGH VIA AND METHOD FOR FORMING THE SAME

Simplified Explanation

The present disclosure provides a semiconductor device with a via, insulating structure, and doped region in the peripheral area of the substrate.

  • The semiconductor device includes a substrate with a device area and a peripheral area.
  • A via is disposed in the peripheral area and extends partially through the substrate.
  • An insulating structure surrounds the via and extends partially through the substrate.
  • A doped region is located in the peripheral area, over or in the substrate, adjacent to the via.

Potential Applications

This technology could be applied in:

  • Semiconductor manufacturing
  • Integrated circuit design
  • Electronic device production

Problems Solved

This technology helps in:

  • Improving the performance of semiconductor devices
  • Enhancing the reliability of integrated circuits
  • Reducing signal interference in electronic devices

Benefits

The benefits of this technology include:

  • Increased efficiency in semiconductor manufacturing
  • Enhanced functionality of integrated circuits
  • Improved overall performance of electronic devices

Potential Commercial Applications

Optimizing Semiconductor Device Structure for Enhanced Performance

Possible Prior Art

There is no known prior art for this specific semiconductor device structure.

Unanswered Questions

How does this semiconductor device compare to existing technologies in terms of performance and reliability?

This article does not provide a direct comparison with existing technologies to evaluate performance and reliability.

What are the specific manufacturing processes involved in creating this semiconductor device?

The article does not detail the specific manufacturing processes used to create this semiconductor device.


Original Abstract Submitted

The present disclosure provides a semiconductor device. The semiconductor device includes: a substrate having a device area and a peripheral area surrounding the device area; a via, disposed at the peripheral area and extending at least partially through the substrate; an insulating structure, disposed at the peripheral area, extending at least partially through the substrate and surrounding the via; and a doped region, disposed at the peripheral area, over or in the substrate and adjacent to the via.