17822454. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chi-Wei Wu of Hsinchu City (TW)
Hsin-Che Chiang of Taipei City (TW)
Jeng-Ya Yeh of New Taipei City (TW)
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17822454 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The abstract describes a method for forming a semiconductor structure by creating first and second fin structures, then forming first and second gate stacks that extend across the fin structures, and etching the gate stacks to create trenches. Gate cutting structures are then formed in the trenches.
- Formation of first and second fin structures over a substrate
- Creation of first and second gate stacks extending across the fin structures
- Etching of gate stacks to form trenches with different dimensions
- Formation of gate cutting structures in the trenches
Potential Applications
- Semiconductor manufacturing
- Integrated circuit fabrication
Problems Solved
- Improving semiconductor structure formation
- Enhancing performance of semiconductor devices
Benefits
- Increased efficiency in semiconductor manufacturing
- Enhanced functionality of integrated circuits
Original Abstract Submitted
A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming first fin structures and a second fin structures over a substrate, forming a first gate stack and a second gate stack that extend in a first direction across the first fin structures and the second fin structures, respectively, and etching the first gate stack and the second gate stack to form a first trench through the first gate stack and a second trench through the second gate stack. A first dimension of the first trench in the first direction is greater than a second dimension of the second trench in the first direction. The method further includes forming a first gate cutting structure and a second gate cutting structure in the first trench and the second trench, respectively.
