17689644. Semiconductor Devices with Uniform Gate Regions simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Semiconductor Devices with Uniform Gate Regions
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chia-Chien Kuang of Hsinchu City (TW)
Tze-Chung Lin of Hsinchu City (TW)
Li-Te Lin of Hsinchu City (TW)
Semiconductor Devices with Uniform Gate Regions - A simplified explanation of the abstract
This abstract first appeared for US patent application 17689644 titled 'Semiconductor Devices with Uniform Gate Regions
Simplified Explanation
The present disclosure describes a semiconductor device with uniform gate regions and a method for forming the same. The method involves forming a fin structure on a substrate, which includes one or more nanostructures. A portion of the fin structure is then removed to expose the end of the nanostructures. The end of the nanostructures is etched using a gas mixture of fluorine (F) and hydrogen fluoride (HF) in multiple etching cycles. An exhaust gas mixture containing the etching byproduct is removed. Finally, an inner spacer is formed in the etched end of the nanostructures.
- Method for forming a semiconductor device with uniform gate regions
- Formation of a fin structure on a substrate
- Removal of a portion of the fin structure to expose the end of nanostructures
- Etching of the nanostructures using a gas mixture of fluorine (F) and hydrogen fluoride (HF)
- Removal of exhaust gas mixture containing etching byproduct
- Formation of an inner spacer in the etched end of the nanostructures
Potential Applications
This technology can be applied in various semiconductor devices, including but not limited to:
- Transistors
- Integrated circuits
- Memory devices
- Microprocessors
Problems Solved
The method described in the patent application solves the problem of non-uniform gate regions in semiconductor devices. By etching the end of the nanostructures using a gas mixture of fluorine and hydrogen fluoride, a substantially uniform gate region can be achieved.
Benefits
The benefits of this technology include:
- Improved performance and reliability of semiconductor devices
- Enhanced control over the gate regions
- Simplified manufacturing process
- Cost-effective production of semiconductor devices
Original Abstract Submitted
The present disclosure describes a semiconductor device with substantially uniform gate regions and a method for forming the same. The method includes forming a fin structure on a substrate, the fin structure including one or more nanostructures. The method further includes removing a portion of the fin structure to expose an end of the one or more nanostructures and etching the end of the one or more nanostructures with one or more etching cycles. Each etching cycle includes purging the fin structure with hydrogen fluoride (HF), etching the end of the one or more nanostructures with a gas mixture of fluorine (F) and HF, and removing an exhaust gas mixture including an etching byproduct. The method further includes forming an inner spacer in the etched end of the one or more nanostructures.
