Taiwan semiconductor manufacturing co., ltd. (20240096883). METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract

METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Ji-Cheng Chen of Hsinchu City (TW)

Ching-Hwanq Su of Tainan City (TW)

Kuan-Ting Liu of Hsinchu City (TW)

Shih-Hang Chiu of Taichung City (TW)

METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096883 titled 'METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR

Simplified Explanation

The abstract describes a method of manufacturing a gate structure, involving the formation of a gate dielectric layer, deposition of a work function layer, formation of a barrier layer, and deposition of a metal layer to introduce fluorine atoms into the barrier layer.

• Formation of gate dielectric layer
• Deposition of work function layer
• Formation of barrier layer
• Deposition of metal layer to introduce fluorine atoms
• Barrier layer formation steps:

 * Formation of first tin layer on work function layer
 * Conversion of top portion of first tin layer into trapping layer with silicon or aluminum atoms
 * Formation of second tin layer on trapping layer

Potential Applications

The technology can be applied in the manufacturing of advanced semiconductor devices, particularly in the fabrication of gate structures in transistors.

Problems Solved

1. Enhanced performance and reliability of semiconductor devices. 2. Improved control over gate structures in transistors.

Benefits

1. Increased efficiency and functionality of semiconductor devices. 2. Better integration of gate structures in transistor design. 3. Enhanced overall performance of electronic devices.

Potential Commercial Applications

Optimizing gate structures in transistors for various electronic applications, such as in smartphones, computers, and other consumer electronics.

Possible Prior Art

One possible prior art could be the use of different materials or methods for forming gate structures in semiconductor devices.

How does the introduction of fluorine atoms impact the performance of the gate structure?

The abstract does not provide specific details on the effects of introducing fluorine atoms into the barrier layer. Further research or experimentation may be needed to understand the implications of this process on the overall performance of the gate structure.

What are the specific advantages of using silicon or aluminum atoms in the trapping layer?

The abstract mentions the inclusion of silicon or aluminum atoms in the trapping layer but does not elaborate on the benefits or advantages of using these specific elements. Additional information or studies may be required to determine the rationale behind this choice and its impact on the gate structure.

Original Abstract Submitted

a method of manufacturing a gate structure includes at least the following steps. a gate dielectric layer is formed. a work function layer is deposited on the gate dielectric layer. a barrier layer is formed on the work function layer. a metal layer is deposited on the barrier layer to introduce fluorine atoms into the barrier layer. the barrier layer is formed by at least the following steps. a first tin layer is formed on the work function layer. a top portion of the first tin layer is converted into a trapping layer, and the trapping layer includes silicon atoms or aluminum atoms. a second tin layer is formed on the trapping layer.