US Patent Application 17828802. METHOD OF PREPARING ACTIVE AREAS simplified abstract
Contents
METHOD OF PREPARING ACTIVE AREAS
Organization Name
Inventor(s)
YING-CHENG Chuang of TAOYUAN CITY (TW)
METHOD OF PREPARING ACTIVE AREAS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17828802 titled 'METHOD OF PREPARING ACTIVE AREAS
Simplified Explanation
The present disclosure describes a method for preparing active areas on a substrate.
- The method involves receiving a substrate with an oxide layer, a nitride layer, and a silicon layer.
- A patterned photoresist layer is formed on the silicon layer.
- A mask layer is deposited to cover the contour of the patterned photoresist layer.
- A carbon layer is coated on the mask layer.
- The carbon layer, mask layer, and silicon layer are etched to expose the top surface of the nitride layer.
- Multiple opens are formed in the oxide layer to expose the top surface of the substrate.
- An epitaxial layer is grown from the top surface of the substrate in the multiple opens to form the active areas.
Original Abstract Submitted
The present disclosure provides a method of preparing active areas. The method includes the operations of: receiving a substrate having an oxide layer, a nitride layer, and a silicon layer thereon; forming a patterned photoresist layer on the silicon layer; depositing a mask layer to cover a contour of the patterned photoresist layer; coating a carbon layer on the mask layer; etching the carbon layer, the mask layer, and the silicon layer to expose a top surface of the nitride layer; forming a plurality of opens in the oxide layer to expose a top surface of the substrate; and growing an epitaxial layer from the top surface of the substrate in the plurality of opens to form the active areas.
