US Patent Application 18446960. DEVICES WITH STRAINED ISOLATION FEATURES simplified abstract
Contents
DEVICES WITH STRAINED ISOLATION FEATURES
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chang-Miao Liu of Hsinchu (TW)
Huiling Shang of Hsinchu County (TW)
DEVICES WITH STRAINED ISOLATION FEATURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446960 titled 'DEVICES WITH STRAINED ISOLATION FEATURES
Simplified Explanation
The abstract describes a semiconductor device and a method of forming it.
- The semiconductor device includes two fins, each with a source/drain region.
- There is an isolation layer between the two source/drain regions.
- A second isolation layer is placed on top of the first isolation layer.
- The first isolation layer is present on the sidewalls of the source/drain regions.
- The second isolation layer is positioned between the first isolation layer on the sidewalls.
Original Abstract Submitted
A semiconductor device and a method of forming the same are provided. A semiconductor device of the present disclosure includes a first fin including a first source/drain region, a second fin including a second source/drain region, a first isolation layer disposed between the first source/drain region and the second source/drain region, and a second isolation layer disposed over the first isolation layer. A first portion of the first isolation layer is disposed on sidewalls of the first source/drain region and a second portion of the first isolation layer is disposed on sidewalls of the second source/drain region. A portion of the second isolation layer is disposed between the first portion and second portion of the first isolation layer.
