18199504. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seonhaeng Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18199504 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with opposing first and second surfaces. An isolation layer extends through the substrate, defining an active region. A gate electrode is located on the first surface of the substrate, and a wiring structure connects the gate electrode to the active region. The active region consists of a target doped region and a path doped region. The target doped region, located between the isolation layer and the gate electrode, contains a dopant with a high concentration. The path doped region, extending from the second surface of the substrate to the target doped region, contains a dopant with a lower concentration than the target doped region. Both the target doped region and the path doped region are formed by implanting the dopant through the second surface of the substrate.
- The semiconductor device includes a substrate with opposing surfaces, an isolation layer, a gate electrode, and a wiring structure.
- The isolation layer defines an active region in the substrate.
- The gate electrode is located on the first surface of the substrate and is electrically connected to the active region.
- The active region consists of a target doped region and a path doped region.
- The target doped region is between the isolation layer and the gate electrode and has a high dopant concentration.
- The path doped region extends from the second surface of the substrate to the target doped region and has a lower dopant concentration.
- Both the target doped region and the path doped region are formed by implanting the dopant through the second surface of the substrate.
Potential Applications
- This semiconductor device can be used in various electronic devices, such as integrated circuits and microprocessors.
- It can improve the performance and efficiency of these electronic devices by enhancing the conductivity and control of the active region.
Problems Solved
- The device isolation layer helps prevent leakage of electrical signals between different components of the semiconductor device.
- The target and path doped regions allow for precise control of the dopant concentration in the active region, improving the device's performance and reducing power consumption.
Benefits
- The semiconductor device offers improved conductivity and control in the active region, leading to enhanced performance and efficiency.
- The precise control of dopant concentration allows for better customization and optimization of the device for specific applications.
- The device isolation layer ensures proper isolation and prevents interference between different components, enhancing overall device reliability.
Original Abstract Submitted
A semiconductor device includes a substrate including first and second surfaces opposing each other. A device isolation layer extends through the substrate and defines an active region in the substrate. A gate electrode is on the first surface of the substrate. A wiring structure electrically connects the gate electrode and the active region. The active region includes a target doped region between the device isolation layer and the gate electrode and including a dopant having a first concentration. A path doped region is between the device isolation layer and the gate electrode and extends from the second surface of the substrate to the target doped region. The path doped region includes a dopant having a second concentration less than the first concentration. The target doped region and the path doped region are formed by implanting the dopant through the second surface of the substrate.
