US Patent Application 18358464. DECOUPLING FINFET CAPACITORS simplified abstract
Contents
DECOUPLING FINFET CAPACITORS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Chung-Hui Chen of Hsinchu City (TW)]]
DECOUPLING FINFET CAPACITORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18358464 titled 'DECOUPLING FINFET CAPACITORS
Simplified Explanation
- The patent application describes a semiconductor device that includes field-effect transistors (finFETs) and fin capacitors formed on a silicon substrate. - The fin capacitors consist of silicon fins, electrical conductors placed between the silicon fins, and insulating material separating the silicon fins from the electrical conductors. - The fin capacitors may also have insulating material between the electrical conductors and the underlying semiconductor material. - The innovation lies in the design and configuration of the fin capacitors, which provide improved performance and functionality in the semiconductor device. - The use of fin capacitors allows for efficient storage and manipulation of electrical charge in the semiconductor device. - The inclusion of insulating material helps to prevent leakage of electrical charge and enhances the overall performance of the fin capacitors. - The integration of fin capacitors with finFETs on a silicon substrate enables the creation of more advanced and compact semiconductor devices. - The patent application provides a detailed description of the structure and manufacturing process of the fin capacitors, offering valuable insights for those skilled in the field of semiconductor technology.
Original Abstract Submitted
A semiconductor device including field-effect transistors (finFETs) and fin capacitors are formed on a silicon substrate. The fin capacitors include silicon fins, one or more electrical conductors between the silicon fins, and insulating material between the silicon fins and the one or more electrical conductors. The fin capacitors may also include insulating material between the one or more electrical conductors and underlying semiconductor material.
